Allicdata Part #: | 869-1085-2-ND |
Manufacturer Part#: |
ATP213-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 50A ATPAK |
More Detail: | N-Channel 60V 50A (Ta) 50W (Tc) Surface Mount ATPA... |
DataSheet: | ATP213-TL-H Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | ATPAK (2 leads+tab) |
Supplier Device Package: | ATPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3150pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The ATP213-TL-H is a single-channel insulated-gate bipolar transistor (IGBT) module composed of IGBTs, anti-parallel fast recovery diodes and gate drive circuit, with a wide range of applications in fields such as motor control, renewable energy, energy storage and electric driving. It is a highly efficient, reliable and economic semiconductor device that is suitable for working in both AC and DC applications.
IGBTs are semiconductor devices that combine the characteristics of a bipolar transistor and a MOSFET. As opposed to traditional MOSFETs, IGBTs are capable of operating at higher voltages and higher frequencies due to their layered structure. This allows IGBTs to better handle high frequency switching and be more efficient with their energy use. In the ATP213-TL-H, the isolated gate driver is specifically designed with protection measures such as current limiting, short circuit protection and over-voltage protection in order to further optimize its performance in order to protect its components.
The working principle of the IGBT module is based on the process of Gate Control; where the voltage applied to the gate terminal controls the current flow between the emitter and collector. The IGBT is most commonly used in applications where it needs to act as a switch in order to control or regulate the power or energy being used by the device. When low voltage is applied, the IGBT\'s structure blocks current from passing through, and when the voltage is increased, current can flow from the emitter to the collector, allowing the device to be used as an on/off switch.
In summary, the ATP213-TL-H IGBT module is an excellent device for use in a variety of applications, such as motor control, renewable energy, energy storage, and electric driving. Due to its layered structure and gate control process, IGBTs are capable of operating at higher voltages and higher frequencies than MOSFETs, making them more energy efficient and reliable. The ATP213-TL-H module also includes a gate drive circuit with protective measures such as current limiting, short circuit protection and over-voltage protection. Overall, the ATP213-TL-H is an excellent solution for any application requiring an efficient and reliable chip.
The specific data is subject to PDF, and the above content is for reference
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