ATP216-TL-H Allicdata Electronics
Allicdata Part #:

ATP216-TL-H-ND

Manufacturer Part#:

ATP216-TL-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 50V 35A ATPAK
More Detail: N-Channel 50V 35A (Ta) 40W (Tc) Surface Mount ATPA...
DataSheet: ATP216-TL-H datasheetATP216-TL-H Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 23 mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id: --
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 20V
FET Feature: --
Power Dissipation (Max): 40W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: ATPAK
Package / Case: ATPAK (2 leads+tab)
Description

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The ATP216-TL-H is a single power MOSFET transistor manufactured by Alpha & Omega Semiconductor. The device is in a “TO-220” style packaging, meaning that it requires 2 mounting points for supporting the device. The device has 3 pins on the bottom, two for the drain and source, and one for the gate.

The field of application for this component is quite wide due to its functionality. It’s used in many medium and low voltage applications, where a high current is needed. Examples of applications could include LED drivers, electronic ballasts, DC-DC converters, and power switches.

The ATP216-TL-H is built using advanced trench technology, which gives it a low on-resistance and low gate charge. This enables it to switch very quickly and efficiently, but also at low gate voltages, meaning that the loss of power is greatly reduced.

The working principle of this device is the same as for any other MOSFET. When a voltage is applied to the gate, it draws a charge from the source, which in turn causes a voltage drop across the channel. This drop causes a current to flow through the channel, which is then able to control the current in the external circuit.

The ATP216-TL-H has a P-Channel design, meaning that the current is controlled by a negative voltage at the gate. When the voltage at the gate is negative, it creates a depletion region in the channel, which acts like a resistor and prevents current from flowing. This type of MOSFET is particularly useful in a variety of applications, such as current regulation, serve control, and much more.

The ATP216-TL-H is a powerful and reliable device that is suitable for a wide range of applications. With its advanced trench technology and low on-resistance, it is able to switch quickly and efficiently, while still operating at low gate voltages. This makes it a reliable and versatile device, which can be used in many applications.

The specific data is subject to PDF, and the above content is for reference

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