ATP214-TL-H

Vgs(th) (Max) @ Id:	--
Package / Case:	ATPAK (2 leads+tab)
Supplier Device Package:	ATPAK
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	60W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4850pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	96nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	8.1 mOhm @ 38A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	75A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

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ATP214-TL-H Application Field and Working Principle

ATP214-TL-H is a single-gate field-effect transistor (FET) manufactured by Advanced Transistor Products (ATP). It is primarily used in power applications such as switching, amplification, and regulation. It is constructed with a P-channel MosFET, which makes it well-suited for use in low-power applications.

Application Field

The ATP214-TL-H is commonly used in high-power switching applications such as power management, regulation, and voltage regulation. It can be employed for various power requirements such as regulator designs, load switching, motor switching, and motor control. It is also suitable for use in low- and medium-power applications that require an effective power management system, such as switching regulator and amplifier designs.

Working Principle

The ATP214-TL-H operates according to the basic principles of FET technology. FETs work by allowing a small current, known as a gate current, to regulate the flow of larger currents, or drain current, through the transistor. In this case, the gate current is applied to one side of the gate and the current flowing through the other side of the gate is regulated according to the amount of gate current applied.The ATP214-TL-H is a P-channel FET, meaning that the gate current is applied to the P-type gate and the drain current is regulated on the N-type side of the gate. As with all FETs, the larger the gate current, the larger the drain current. The threshold voltage of the ATP214-TL-H is 4V, and the maximum operating drain voltage is 40V, making it an excellent choice for low-voltage and high-power applications.

Conclusion

The ATP214-TL-H is an excellent choice for a wide range of applications requiring a high-power FET. Its low threshold voltage and high drain current capability make it suitable for a variety of power management and switching applications. It is also suitable for applications that require robust, reliable power management solutions because of its ability to regulate and limit the drain current.

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