ATP218-TL-H Allicdata Electronics
Allicdata Part #:

ATP218-TL-H-ND

Manufacturer Part#:

ATP218-TL-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 100A ATPAK
More Detail: N-Channel 30V 100A (Ta) 60W (Tc) Surface Mount ATP...
DataSheet: ATP218-TL-H datasheetATP218-TL-H Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: ATPAK (2 leads+tab)
Supplier Device Package: ATPAK
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 10V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 50A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The ATP218-TL-H is a type of MOSFET, a metal-oxide-semiconductor field-effect transistor (MOSFET). MOSFETs are used in applications that require high-power and high-speed switching, such as motor control, power management, and duty-cycle control. The ATP218-TL-H is a single-drain MOSFET, meaning it has one source and one drain. It is rated for a drain-source voltage (VDS) of 200V, with a maximum drain current (ID) of 37A, and a maximum transconductance (GFS) of 45S.

The ATP218-TL-H is mainly used in high-power applications and is especially suitable for DC-AC conversions as well as for switching power supplies, inverters and motor control. The MOSFET has superior switching characteristics due to its fast switching speed and low gate-charge. Its low on-state resistance and high current and power handling capacity make the ATP218-TL-H an ideal choice for high-power switching applications.

The working principle of the ATP218-TL-H is based on the MOSFET\'s property of voltage-controlled field effect. When a voltage is applied to the gate terminal of the transistor, a channel is opened between the drain and source, allowing current to flow. This process is voltage-dependent, meaning the channel only opens if a certain voltage is applied to the gate terminal. The gate voltage alters the width of this channel and thus changes the amount of current that flows through it.

The circuit requirements for using the ATP218-TL-H are simple, as it requires a spike-free gate source voltage, a variable gate source resistor, and a variable drain source resistor. Using these components, it can be adjusted for various applications. Moreover, since it has a low on-state resistance, it significantly reduces power dissipation and is thus more energy efficient. This makes it attractive for energy-saving applications.

Due to its high performance, fast switching speed, low gate-charge, and low on-state resistance, the ATP218-TL-H is an ideal choice for specific high-power applications. Furthermore, its low power consumption and efficiency make it an attractive choice for energy saving applications. With the proper circuit requirements, the ATP218-TL-H can be adjusted for any situation, making it a great choice for many uses.

The specific data is subject to PDF, and the above content is for reference

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