ATP207-S-TL-H Allicdata Electronics
Allicdata Part #:

ATP207-S-TL-H-ND

Manufacturer Part#:

ATP207-S-TL-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 40V 65A ATPAK
More Detail: MOSFET N-CH 40V 65A ATPAK
DataSheet: ATP207-S-TL-H datasheetATP207-S-TL-H Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: --
Technology: --
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: ATPAK
Package / Case: ATPAK (2 leads+tab)
Description

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ATP207-S-TL-H is a single shallow trench isolation (STI) MOSFET. This field effect transistor (FET) is a type of switching device and is often used to control the flow of electrical current in high-frequency applications. This MOSFET is designed to be a small and efficient power switch. As such, it is ideal for use in automotive and industrial applications, as well as power supplies, motor control and audio/ video equipment. With its small size, the ATP207-S-TL-H offers excellent power handling capabilities and low total harmonic distortion.

The working principle of the ATP207-S-TL-H is quite simple, yet quite efficient. The ATP207-S-TL-H is a MOSFET, or metal-oxide-semiconductor field-effect transistor. It acts as a switch, allowing or blocking the flow of current when necessary. It is an “unipolar” device, meaning that it is made up of one type of carrier (electron or hole) and one type of semiconductor material.

The ATP207-S-TL-H uses an insulated gate in order to control the flow of electrical current. The gate is insulated from the two semiconductor materials that make up the device. To control the current flow, a voltage is applied to the gate. This creates an electric field that modulates the conductance of the device. In other words, the ATP207-S-TL-H can be used to switch current on and off as needed. When the voltage applied to the gate is high enough, a thin layer of negative charge forms at the interface between the gate and semiconductor material. This layer acts as a barrier to the current, blocking any further flow. When the voltage is lowered, the barrier weakens and allows the current to flow again.

The ATP207-S-TL-H is an effective and efficient means of controlling high-frequency current. It features a low on-state resistance and high off-state resistance, making it well-suited for power switching applications. The ATP207-S-TL-H also offers excellent thermal and electrical characteristics, making it ideal for use in automotive and industrial applications. Furthermore, the ATP207-S-TL-H is designed to minimize total harmonic distortion, which helps ensure high-quality audio and video signals.

In conclusion, the ATP207-S-TL-H is a single shallow trench isolation (STI) metal-oxide-semiconductor field-effect transistor (MOSFET) which is well-suited for use in high-frequency applications. It offers excellent thermal and electrical characteristics, as well as low total harmonic distortion. With its small size and excellent power handling capabilities, the ATP207-S-TL-H is ideal for use in automotive and industrial applications, as well as power supplies, motor control and audio/video equipment.

The specific data is subject to PDF, and the above content is for reference

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