Allicdata Part #: | AUIRF7303Q-ND |
Manufacturer Part#: |
AUIRF7303Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 30V 5.3A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 5.3A 2.4W Surf... |
DataSheet: | AUIRF7303Q Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 515pF @ 25V |
Power - Max: | 2.4W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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TheAUIRF7303Q is a 3-Channel Array Power MOSFET manufactured by IRF and commonly used in power management and motor control. It is designed to provide high power density, low on-resistance `and low gate charge. As a result of its versatility, it has a wide range of applications.
This MOSFET is an N-Channel device, meaning it is designed to switch on when a voltage is applied to its gate terminal. This voltage causes a depletion layer to form between the drain and source, creating an open channel which allows the flow of current from the drain to the source. The resistance is determined by the size of the channel and can be adjusted using the drain-source voltage or gate-source voltage.
TheAUIRF7303Q operates in a voltage range of up to 100 volts; its on-resistance is very low compared to other MOSFETs of similar size. It also has a very low gate input capacitance making it ideal for high-frequency applications. With its three channels, this MOSFET can be used to control the power of multiple devices or to control the direction of high-power DC motors.
TheAUIRF7303Q is commonly used in electric vehicles, robotic systems, solar power systems, uninterruptible power supplies, high-frequency power switch designs, home and industrial automation and in communication systems. It can be used to provide power to multiple devices simultaneously, as well as providing control for motors. It is also used in wireless power transfer systems, where it can be used to efficiently control the direction of power flow.
The working principle of the AUIRF7303Q is simple. When the voltage is applied to its gate terminal, the depletion layer forms between the drain and source and current can flow from drain to source. This is achieved by controlling the resistance between the drain and source. This resistance is determined by the size of the channel formed by the depletion layer and can be adjusted by changing the drain-source voltage or gate-source voltage.
TheAUIRF7303Q can effectively control multiple devices or motors by providing a high power density and low on-resistance. Its low gate input capacitance makes it suitable for high-frequency applications, making it the ideal choice for power management and motor control. It is commonly used in electric vehicles, robotic systems, solar power systems, uninterruptible power supplies, high-frequency power switch designs, home and industrial automation, as well as in communication systems.
The specific data is subject to PDF, and the above content is for reference
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