Allicdata Part #: | AUIRF7309Q-ND |
Manufacturer Part#: |
AUIRF7309Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N/P-CH 30V 4A/3A 8SOIC |
More Detail: | Mosfet Array N and P-Channel 30V 4A, 3A 1.4W Surfa... |
DataSheet: | AUIRF7309Q Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 4A, 3A |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 2.4A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 520pF @ 15V |
Power - Max: | 1.4W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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.The AUIRF7309Q is a Quad Positive-Channel Delayed Insulated Gate Bipolar Transistor(IGBT) array. This integrated circuit is part of the family of IGBT devices manufactured by International Rectifier. The device provides four separate channels of IGBT switch and is useful for light load switching and applications where protection against short-circuiting is necessary.
The AUIRF7309Q utilizes the same basic design of other IGBT devices. It consists of four IGBT switches, or positive channels, operating at high switching speeds of up to 200 kHz. Each of the four channels also has a built-in diode and a delay circuit. The diode enables each channel to monitor the load current, and the delay circuit allows each channel to open after a predetermined time has elapsed. The AUIRF7309Q uses an internal gate resistor for improved switching characteristics and to prevent short-circuiting.
The AUIRF7309Q is well-suited for use in applications such as power switching, motor control and general PWM control. It can be used to control the voltage, current or frequency of the output. The AUIRF7309Q offers the advantage of fast switching speeds, high tolerance of input voltages and high current capacity. Its integrated diode and built-in delay circuit ensure protection against short-circuiting in high-current applications.
The working principle of the AUIRF7309Q is based on the basic operations of IGBT devices. To operate, IGBTs require a voltage on the gate electrode to control the opening and closing of the channel. When the gate voltage is high, the IGBT channel will be closed. When the gate voltage is low, the channel will be opened. The current flowing through the channel is determined by the voltage applied to the input. The delay circuit in the AUIRF7309Q monitors the input voltage and adjusts the timing of each channel opening and closing as necessary. This ensures accurate switching of the channels when the AUIRF7309Q is used in high-current applications.
In conclusion, the AUIRF7309Q is a high-performance Quad Positive-Channel Delayed Insulated Gate Bipolar Transistor (IGBT) array suitable for applications where protection against short-circuiting is necessary. Its integrated diode and built-in delay circuit protect against short-circuiting and provide accurate switching at high voltage and current levels. Its fast switching speeds, high tolerance of input voltages and high current capacity make it an ideal choice for power switching, motor control and general PWM control.
The specific data is subject to PDF, and the above content is for reference
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