Allicdata Part #: | AUIRF7313QTR-ND |
Manufacturer Part#: |
AUIRF7313QTR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 30V 6.5A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 6.9A 2.4W Surf... |
DataSheet: | AUIRF7313QTR Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 6.9A |
Rds On (Max) @ Id, Vgs: | 29 mOhm @ 6.9A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 755pF @ 25V |
Power - Max: | 2.4W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The AUIRF7313QTR is part of the family of advanced power MOSFETs from ON Semiconductor. It is designed as a solution to effectively allocate power dissipation and thermal management in high temperature and high current applications. The maximum drain source voltage rating is 100V and the maximum drain current is 17A. The maximum power dissipation is 140W. This, combined with an RDSon of 0.03Ohm, makes the AUIRF7313QTR suitable for a wide range of applications including DC/DC converters, high-efficiency power supplies and switching power amplifiers.
The AUIRF7313QTR is a dual-channel enhancement mode field effect transistor (FET) also known as MOSFET, suitable for high temperature, high current application. It utilizes unique advanced packaging technology for improved performance and maximum power and temperature management. The AUIRF7313QTR is a monolithic array of two independent FETs and each FET has a distinct gate, source and drain. The operation of the device is based on the principle of majority charge carriers. The drain and source are connected to the P and N type regions while the gate is connected to the N type region. When a positive voltage is applied to the gate, majority charge carriers flow from source to the drain, which causes the device to be in an “on” state and current passes through the device. The current can be limited by controlling the gate voltage. The safe operating area (SOA) of the device can be determined by the current-voltage characteristics.
The AUIRF7313QTR has a high input impedance, wide drain-source voltage tolerance, low on-state resistance, high thermal withstand capability, high efficiency and low gate-source capacitance. It is also temperature compensated and capable of operating in a wide temperature range from -40°C to 175°C. The device is available in four voltage ratings and is supplied in a thermally-enhanced, surface-mountable plastic packaging. The device can be used in DC/DC converters, high efficiency power supplies and switching power amplifiers.
The AUIRF7313QTR is an ideal solution for heat management and power dissipation in high temperature applications. It has an RDSon of 0.03Ohm, making it suitable for applications requiring high current throughput. The device has a robust packaging technology which provides superior thermal management and a wide temperature range. The device is capable of operating in a wide range of conditions, making it ideal for high temperature, high current applications.
In summary, the AUIRF7313QTR is a dual-channel MOSFET array, designed specifically for high temperature and high current applications. It has integrated packaging technology to ensure superior thermal management. The device is suitable for applications such as DC/DC converters, high efficiency power supplies, switching power amplifiers and any other applications requiring high current throughput.
The specific data is subject to PDF, and the above content is for reference
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