| Allicdata Part #: | AUIRF7341Q-ND |
| Manufacturer Part#: |
AUIRF7341Q |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET 2N-CH 55V 5.1A 8SOIC |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 55V 5.1A 2.4W Surf... |
| DataSheet: |  AUIRF7341Q Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | HEXFET® |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 55V |
| Current - Continuous Drain (Id) @ 25°C: | 5.1A |
| Rds On (Max) @ Id, Vgs: | 50 mOhm @ 5.1A, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 780pF @ 25V |
| Power - Max: | 2.4W |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
Description
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The AUIRF7341Q is an array of Advanced High-Voltage Power MOSFETs, featuring integrated driver circuitry. Its advanced process technology and packaging offer enhanced performance and high power density, in a small footprint. It is rated for a maximum operating temperature of 175 °C and a breakdown of >1200 V.
Applications
The AUIRF7341Q is an ideal solution for high voltage applications. Its high voltage and high temperature ratings make it well-suited for switch-mode power supplies and dc/dc converters. Due to its high power density, the AUIRF7341Q can also be used in reverse battery protection applications. Additionally, the integrated driver circuitry enables the device to be used for high-efficiency motor control in automotive applications.Working Principle
The AUIRF7341Q is an array of six advanced high-voltage power MOSFETs. It features advanced process technology and packaging that offer increased power density and improved performance in a small footprint. The integrated driver circuit provides a high current sink/source capability and can be used as an integrated gate driver for the individual MOSFETs. The MOSFETs are operated in standard enhancement mode with a gate voltage applied to the current mirror switches. When the gate voltage is low, the current mirror switches are off, and the MOSFETs are effectively off. When the gate voltage is high, the current mirror switches are on, and the MOSFETs are effectively on.The thermal shutdown and active current limiting circuits provide over-temperature and current limiting protection for each MOSFET. The device is designed to limit the gate-source voltage for compatibility with PWM controllers, and to ensure a low forward voltage drop when the MOSFETs are on.Conclusion
The AUIRF7341Q is an array of advanced high-voltage power MOSFETs, featuring integrated driver circuitry. It is ideal for high voltage applications, including switch-mode power supplies, dc/dc converters, reverse battery protection, and motor control. The device operates in standard enhancement mode with a gate voltage applied to the current mirror switches, and the integrated driver offers a high current sink/source capability. The device is also designed with thermal shutdown and active current limiting circuits to provide over-temperature and current limiting protection.The specific data is subject to PDF, and the above content is for reference
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