Allicdata Part #: | AUIRF7343Q-ND |
Manufacturer Part#: |
AUIRF7343Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N/P-CH 55V 4.7/3.4A 8SOIC |
More Detail: | Mosfet Array N and P-Channel 55V 4.7A, 3.4A 2W Sur... |
DataSheet: | AUIRF7343Q Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 4.7A, 3.4A |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 4.7A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 740pF @ 25V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The AUIRF7343Q is a three-terminal, N-channel, short-channel field-effect power transistor array. It is a versatile device with a wide range of applications and is particularly well suited to power switching applications in the automotive, consumer, medical, or industrial market. This device is ideal for use in applications requiring robustness and reliability such as light-lamp dimming, power management, and power control.
The AUIRF7343Q is available in a variety of packages designed for ease-of-use in high-power applications. The benefits of the array include improved thermal performance, low on-resistance, and low threshold voltage. In addition, the array integrates an ESD protection area needed for operating in high-voltage applications. The ESD protection area also enables faster switching and reduces the size of external circuits.
The AUIRF7343Q provides significant benefits for applications requiring low on-resistance, such as power converters and inverters, motor control, and battery management systems. The array offers low on-resistance and high-system performance, as well as very low thresholds, rendering it easier to switch on and off signals. The array also supports lower current and power consumption, which helps extend battery life and optimize total system cost.
The AUIRF7343Q provides a high level of integration, allowing users to customize the array to suit their applications. The array is available in both a standard logic combination, as well as a debugging mode where users can program the on-resistance of the switches by selecting two or more pins on the array. The debugging mode enables users to easily customize the on-resistance of their system so that it can be optimized for various levels of performance, power consumption, and cost.
The AUIRF7343Q utilizes a switching principle known as the P-channel Metal-Oxide-Semiconductor (MOSFET) array, which is composed of three components: a source, a drain, and a gate. The source and drain of the switch are connected to the power supply and the gate is used to control the switching of the array. The gate voltage controls the current through the P-channel MOSFET, which can be turned on and off with external signals. When the array is off, the gate voltage is pulled down, allowing the current to flow through the device. When the array is on, the gate voltage is pulled up, blocking the current.
The AUIRF7343Q is ideal for use in a wide range of applications requiring robustness and reliability, such as light-lamp dimming, power management, power control, and power converters. The array\'s low on-resistance and high-system performance, combined with its customizable on-resistance and ESD protection feature, make it an excellent choice for high-power applications. With its low on-resistance, the AUIRF7343Q can be used to efficiently switch large loads, and its versatile package sizes make it an ideal solution for systems that require robustness and reliability.
The specific data is subject to PDF, and the above content is for reference
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