Allicdata Part #: | AUIRF9952Q-ND |
Manufacturer Part#: |
AUIRF9952Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N/P-CH 30V 3.5A/2.3A 8SO |
More Detail: | Mosfet Array N and P-Channel 30V 3.5A, 2.3A 2W Sur... |
DataSheet: | AUIRF9952Q Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A, 2.3A |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 190pF @ 15V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The AUIRF9952Q is a Quad Power FET Array that is commonly used in high-performance power management for consumer and industrial applications. The unit has a wide range of applications in a variety of consumer and industrial electronics such as mobile phones, computers, televisions, electric vehicles, and consumer electronic products. This device is an important component of power management and it is widely used in automotive and industrial control circuits, as well as consumer applications.
The AUIRF9952Q offers the highest levels of performance in its class. It offers a very high current capacity rating, a low impedance design, a high speed switching rate, and a very low input capacitance. It also offers a wide range of overvoltage protection and undervoltage protection, which is important in order to protect the circuit from high voltage and current shocks. Additionally, it has excellent temperature performance and is highly reliable in operation.
The AUIRF9952Q Power FET Array is a four-FET array which consists of four N-channel MOSFETs in a single package. The FETs are arranged in a 4x4 linear array with the source and drain pins on opposite sides of the array. The central point of connection is the gate pin. The FETs are suitable for many different types of applications, and can be operated in low voltage, medium voltage, and high voltage configurations. The FETs are capable of switching up to 100V, with a maximum drain source current of 10A (collectively).
The working principle of the AUIRF9952Q is based on the principles of MOSFETs. The gate terminal of the FET acts as a control pin to open and close the connection between the source and drain pins. When the gate voltage is high, the connection between the source and drain pins is charged and the current flows through. When the gate voltage is low, the connection between the source and drain pins is disconnected and the current no longer flows through. The operation of the FET is dependent on the gate voltage; so, the operation of the FET array is also dependent on the gate voltage.
The AUIRF9952Q Power FET Array is an ideal solution for power management in consumer and industrial applications. Its features make it an ideal choice for many applications such as mobile phones, computers, televisions, electric vehicles, and consumer electronic products. It is a reliable, high performance device, and is capable of providing high levels of current access. The array also offers low impedance switching and high speed switching, and is capable of operating over a wide range of overvoltage and undervoltage conditions.
The specific data is subject to PDF, and the above content is for reference
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