AUIRF9952QTR Allicdata Electronics
Allicdata Part #:

AUIRF9952QTR-ND

Manufacturer Part#:

AUIRF9952QTR

Price: $ 0.47
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N/P-CH 30V 3.5A/2.3A 8SO
More Detail: Mosfet Array N and P-Channel 30V 3.5A, 2.3A 2W Sur...
DataSheet: AUIRF9952QTR datasheetAUIRF9952QTR Datasheet/PDF
Quantity: 1000
4000 +: $ 0.42022
Stock 1000Can Ship Immediately
$ 0.47
Specifications
Series: HEXFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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The AUIRF9952QTR is a popular MOSFET array manufactured by ON Semiconductor. It is composed of two logic level enhancement mode MOSFETs connected to two independent, symmetrical source leads. The AUIRF9952QTR is designed specifically for applications that require low voltage gate drive while providing high current capability, durability, and electrical isolation.

The AUIRF9952QTR can be used in a variety of applications. It is often used in power conversion and motor control, as well as automotive and communication systems. In motor control, the AUIRF9952QTR can be used to switch high current loads with a low gate voltage drive. It is also commonly used for high-speed switching and power supply design, as it can provide a high-speed response to voltage transients. Additionally, the AUIRF9952QTR is used in a number of communications applications, such as driving opto-isolators, RF antennas, and cellular base station antennas.

The working principle of the AUIRF9952QTR is relatively straightforward. When a positive gate voltage is applied, the two MOSFETs in the device are enabled, allowing current to flow through the two source leads. When the positive gate voltage is removed, the two MOSFETs are disabled, cutting off the current flow between the two source leads.

The AUIRF9952QTR is highly resistant to damage and wear, making it a great option for applications where durability is important. It also provides excellent electrical isolation between the gate and source of the device, making it suitable for applications that require good isolation. Additionally, the AUIRF9952QTR is capable of operating with very low gate voltages, making it a great option for powering low voltage devices.

The AUIRF9952QTR is a powerful and versatile MOSFET array that can be used in a variety of applications. It offers a high level of current capability, durability, and electrical isolation, making it an ideal solution for powering high-current loads, switching high-speed signals, and driving opto-isolators and antennas. Furthermore, its low gate drive voltage requirements make it an ideal choice for powering low-voltage applications. The AUIRF9952QTR offers a great combination of features and is an excellent solution for many power electronics applications.

The specific data is subject to PDF, and the above content is for reference

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