AUIRFN8458TR

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AUIRFN8458TR, Arrays of Field-Effect Transistors and MOSFETs

The AUIRFN8458TR series from International Rectifier is a line of N-channel enhancement mode MOSFETs available in a variety of package types and breakdown voltages. This series of field-effect transistors (FETs) and metal-oxide semiconductor field-effect transistors (MOSFETs) are designed for use in switching, linear amplifier and general-purpose applications. These power transistors are made with a wide range of drain current—ranging from 1.6A to 8A—and a rated voltage of 30V. Other features include a wide region of peak surge current, a maximum insulation voltage of 1500V, and an operating temperature range of -55 °C to 150 °C.

Arrays of field-effect transistors (FETs) and MOSFETs provide users with flexibility in their power handling needs. In essence, arrays of FETs and MOSFETs can act as multiple transistors in one package, and provide circuit designers with several levels of input and output power control. This allows the user to control current or voltage levels, or to switch specific transistors on or off as desired. Arrays of FETs and MOSFETs are typically used for low-current applications, since their low gate threshold voltage (V_gs) allows for more precise control of their operation.

The AUIRFN8458TR series of FETs and MOSFETs exemplify the flexibility provided in this type of power handling technology. Each transistor features fast switching speeds and low ‘on’ resistance. This provides users with the ability to easily control the current and voltage of their circuits, and can make a significant difference in the overall efficiency of their design. In addition, these transistors also feature excellent reliability and thermal characteristics, which ensures that users can count on them even under the most difficult conditions.

The application field for the AUIRFN8458TR series of FETs and MOSFETs is quite wide. These transistors are suitable for use in a broad range of applications ranging from remote or on-site power switches, to solar panel power inverters and power supplies. They can also be used in high-frequency switching applications, such as in switching supplies and in regulated DC-DC converters. In addition, the low gate threshold voltage of the AUIRFN8458TR series of FETs and MOSFETs makes them an ideal choice for power amplifiers, as well as for applications requiring precise voltage or current control.

The working of the AUIRFN8458TR series of FETs and MOSFETs is largely defined by their construction. FETs and MOSFETs consist of a channel, a source terminal, and a drain. The source terminal is used to connect the FET or MOSFET to the power supply, and the drain is used to connect the transistor to the circuit load. The channel is used to control the amount of current that is allowed to flow from the source to the drain.

The current is controlled by the gate voltage, which is applied to the gate terminal. When a voltage is applied to the gate, it attracts electrons, which increases the resistance between the source and the drain, thereby reducing the flow of current. Conversely, when a lower voltage is applied to the gate terminal, the resistance between the source and the drain drops and the current flow is increased. This is the basic principle behind the operation of the AUIRFN8458TR series of FETs and MOSFETs and is how they are used to provide precise control of current and/or voltage levels in a wide range of applications.

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