AUIRS2301STR

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The AUIRS2301STR is a high-voltage insulated gate driver integrated circuit (IC) designed to drive an N-channel MOSFET or N-channel IGBT in a half-bridge configuration. It is designed to operate at up to 700V and is able to switch up to 9A peak. It is part of the FlexE technology family, which enables fast switching, improved efficiency, and easy implementation with integrated protection. This article explores the application field and working principle of AUIRS2301STR.

Application Field

Due to its features, the AUIRS2301STR is primarily used in variable frequency drive (VFD) motor applications. It can also be used in other high power motor control applications such as AC motor drives and DC motor drives. In addition, the device is suitable for driving high power LEDs, such as in street lighting or other lighting applications.

The integrated protection and fast switching speed of the AUIRS2301STR make it suitable for harsh industrial applications, such as welding and traction control. It can also be used in motor control applications such as laser cutting and robotic welding.

Features

The AUIRS2301STR has a wide operating voltage range of 5 to 700V. It can easily be used with a variety of voltage sources, such as dc-dc converters, automotive systems, or industrial systems. The device also has a rated current of 5A, which allows it to be used in high power applications. The maximum peak current of 9A makes the device suitable for driving power MOSFETs and IGBTs.

The device also has integrated protection features such as over-voltage protection, under-voltage lockout, and over-current protection. It also has a fast switching speed of up to 10ns, which enables it to switch quickly and efficiently.

Working Principle

The AUIRS2301STR is an insulated gate driver IC that can drive both N-channel MOSFET and IGBT in a half-bridge configuration. The primary function of the driver IC is to provide the necessary voltage and current to the gate of the power MOSFET or IGBT, enabling it to switch quickly and efficiently. The driver IC provides the necessary gate-source voltage to switch the MOSFET or IGBT on and off as needed. The driver also provides an under-voltage lockout feature, which prevents the IC from allowing the MOSFET or IGBT to be turned on when the input voltage is too low.

The driver IC also provides a built-in over-current protection feature. This feature helps to ensure that the gate current is not excessive and thus reduces the chances of damage to the power MOSFET or IGBT due to excessive current. The AUIRS2301STR also has an integrated dead time feature, which helps to ensure that both the high side and low side of the power MOSFET and IGBT do not switch at the same time, improving reliability.

Conclusion

The AUIRS2301STR is a high-voltage insulated gate driver integrated circuit (IC) designed to drive an N-channel MOSFET or N-channel IGBT in a half-bridge configuration. It has an operating voltage range of 5 to 700V and is designed to switch up to 9A peak. It has a fast switching speed of up to 10ns and integrated protection features such as over-voltage protection, under-voltage lockout, over-current protection, and dead time. It is suitable for applications such as variable frequency drive motor control and LED lighting control.

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