Allicdata Part #: | BC859BW,115-ND |
Manufacturer Part#: |
BC859BW,115 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP 30V 0.1A SOT323 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 200m... |
DataSheet: | BC859BW,115 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02210 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 220 @ 2mA, 5V |
Power - Max: | 200mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
Base Part Number: | BC859 |
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BC859BW,115 is a type of single bipolar junction transistor (BJT) that belongs to the BC859 family. It is a low-power, general-purpose NPN transistor used for various applications such as switching and signal amplification. It features excellent linearity and small signal response, making it suitable for high-frequency applications.
The BC859BW,115 transistor is composed of a single NPN type transistor made from a silicon semiconductor material. It has a collector-base voltage rating of 45V and a collector-emitter voltage rating of 30V. It also has a current gains (hFE) of 70 to 200 and a maximum collector current of 200mA. The collector comes in two different package configurations, namely a TO-92 package and a TO-126 package.
The BC859BW,115 transistor\'s applications include signal amplification, switching circuits, timing circuits, and voltage regulators. It is often used in general-purpose audio amplifiers, television circuits, and audio input stages. It is also suitable for use in applications that require low-noise, high-speed amplification.
The working principle of the BC859BW,115 is simple. When a forward bias is applied to the base-emitter junction, electrons are injected from the emitter into the base junction. These injected electrons, in turn, create a corresponding number of holes in the base. These holes are then swept towards the collector terminal, resulting in an amplified current.
The base and the collector of the BC859BW,115 are interchangeable for reverse-biased and forward-biased operations. When the transistor is reverse-biased and the current increases, the collector current also increases but with a decreased gain. However, when the transistor is forward-biased, the collector current increases with an increased gain.
The BC859BW,115 transistor can operate in a wide range of temperatures, from -55 degrees Celsius to 150 degrees Celsius. Its voltage breakdown range is -6V to 45V. Its maximum power dissipation is 625mW, and maximum junction temperature is 150 degrees Celsius. The pin function of the TO-92 package is as follows: collector (C), base (B), and emitter (E). For the TO-126 package, the pins are C, B, and E.
In conclusion, the BC859BW,115 is a low-power, general-purpose NPN transistor used for switching, signal amplification, and other similar applications. It features excellent linearity and small signal response, making it suitable for high-frequency operations. Its maximum collector current is 200mA and its applications include audio amplifiers and voltage regulators. The base and the collector of this transistor are interchangeable and it has a wide range of temperature, voltage breakdown range and maximum power dissipation. It is also available in two different package configurations, the TO-92 and the TO-126.
The specific data is subject to PDF, and the above content is for reference
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