BC858CLT3G Discrete Semiconductor Products |
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Allicdata Part #: | BC858CLT3GOSTR-ND |
Manufacturer Part#: |
BC858CLT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 30V 0.1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 300m... |
DataSheet: | BC858CLT3G Datasheet/PDF |
Quantity: | 10000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 420 @ 2mA, 5V |
Power - Max: | 300mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BC858CLT3G is a general purpose, NPN silicon transistor typically used as an amplifier or switch. It comes in a SOT-23 package and comes with a standard maximum collector to emitter voltage of 60V. It has a maximum collector current of 500mA, making it a great choice for applications requiring high gain and switching capabilities.
The BC858CLT3G is a bipolar transistor which consists of three layers of alternating P and N type materials. The layers within the transistor are called the emitter, base, and collector. Most bipolar transistors are NPN type, meaning that the emitter and the base layers are N-type, while the collector layer is P-type. This arrangement of NPN type layers forms a diode between the collector and the emitter, and this diode is used to regulate current flow within the circuit.
The way a bipolar transistor works is relatively simple. When a small current is sent to the base terminal, the current is amplified and sent from the collector to the emitter. The amount of amplification is determined by the current gain of the device. The current gain is often referred to as the hFE or hFE number. The higher the hFE, the higher the gain of the transistor; BC858CLT3G typically has hFE values ranging from 300-400.
The BC858CLT3G is a great choice for applications requiring large amounts of amplification and switching. It can be used in amplifiers, voltage regulators, switches, and other circuitry requiring large amounts of current to be switched. It is also very inexpensive and widely available, so it is a great choice for projects, prototyping, and applications where cost is an issue.
Additionally, because it is a surface mount device (SMD), it is easy to incorporate into circuit boards, making it a great choice for projects that require surface-mounted components. Its size also makes it a great choice for small, tight spaces where other components may not fit.
Overall, the BC858CLT3G is an excellent choice for applications requiring large amounts of amplification and switching. It is an inexpensive, widely available, and versatile option for both prototyping and commercial applications for a variety of applications including amplifiers, voltage regulators, and switches.
The specific data is subject to PDF, and the above content is for reference
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