BC856BW/DG/B2,115 Allicdata Electronics
Allicdata Part #:

BC856BW/DG/B2,115-ND

Manufacturer Part#:

BC856BW/DG/B2,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS GEN PURPOSE SC-70
More Detail: Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 200m...
DataSheet: BC856BW/DG/B2,115 datasheetBC856BW/DG/B2,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70
Description

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Bipolar Junction Transistors (BJT), also known as bipolar transistors, are semiconductor devices used in modern electronics. The BC856BW/DG/B2,115 is a single-type BJT that belongs to the PNP family and is commonly used in a variety of applications. It has a high gain and can be used for high-speed switching applications. The device is low power and low cost, and is designed for high-current applications and can be used in high-frequency oscillator circuits. The BC856BW/DG/B2,115 is a three-terminal device, with a base, collector, and emitter. The collector terminal connects to the external load, the base and the emitter are connected to the source. The typical current gain is greater than 50. When voltage is applied to the base-to-emitter junction, current flows from the emitter to the base. When the base current is increased, more electrons are injected into the base, which in turn causes more electrons to flow from the emitter to the base. This causes an increase in the collector current, which amplifies the signal. When the base current is decreased, the collector current decreases, which amplifies the signal in reverse and allows high-speed switching applications to be realized.The device has a thermal resistance junction-to-ambient of 16°C/W and can be used in temperatures up to 150°C. It has a high-frequency response and high-voltage operation and is suitable for high-power, low-noise applications. It is also compatible with ESD standards and features surge immunity up to 8KV and a breakdown voltage of 80V at room temperature. It is also compatible with a variety of loads, such as resistive and inductive. The BC856BW/DG/B2,115 is used in a number of applications, such as motor control circuits, amplifier circuits, signal processing circuits, logic circuits, converter circuits, low-noise amplifiers, and active filters. It is a simple, low-cost, low-power device with a long lifetime and high electrical performance. This makes it a suitable choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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