BC857C RFG Allicdata Electronics
Allicdata Part #:

BC857CRFG-ND

Manufacturer Part#:

BC857C RFG

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: TRANSISTOR, PNP, -45V, -0.1A, 42
More Detail: Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 200m...
DataSheet: BC857C RFG datasheetBC857C RFG Datasheet/PDF
Quantity: 1000
3000 +: $ 0.01417
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

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Introduction

The BC857C RFG is a bipolar, small-signal NPN transistor. It is a member of a family of transistors developed specifically for the growing application field of short-range wireless data communication. From small electronic components to advanced wireless devices, the BC857C RFG offers unmatched performance in terms of multi-frequency operation and peak output power.

Features of BC857C RFG

The BC857C RFG features low-noise operation, good linearity, high breakdown voltage and low-dropout voltage. It has an operating frequency range of 400 MHz to 4 GHz, making it suitable for wireless applications in a variety of applications, such as radio control, radar control, radio telemetry, cellular communication, automotive systems and general communication systems.

Working Principle

The BC857C RFG is designed using a bipolar chip structure, which is similar to that of a conventional NPN transistor. The transistor has an emitter, which is connected to a base, and a collector. The base is connected to a voltage source, which provides the necessary threshold voltage for the transistor’s operation. The collector is connected to the output of the transistor.

The collector voltage is the output of the transistor. When a small voltage is applied to the base electrode of the BC857C RFG, the collector-base junction is forward biased and a current is allowed to flow from the collector to the base. This is called ‘forward bias’ and a change in the collector voltage causes a corresponding change in the collector current, known as ‘alpha’.

The operation of the BC857C RFG is based on the principle of minority carrier injection. When the base-collector junction is forward biased, electrons move from the emitter to the collector, while holes move from the emitter to the base, thus creating a ‘space charge’ region in the junction. This space charge region, or depletion layer, is formed around the emitter-collector junction and results in an increase in the voltage between the collector and emitter.

The voltage drop across the depletion layer is due to the electric field generated by the current flowing through the device. The voltage drop across the depletion layer increases with the increase in current, thus increasing the overall voltage from the base to the collector of the transistor.

The BC857C RFG is a unipolar device and its operation is based on the principle of current control. The collector current is regulated by controlling the voltage applied to the base. When a higher voltage is applied to the base, a larger proportion of current flows through the transistor and hence, a higher collector current is produced. The converse is also true. By controlling the base voltage, the collector current of the transistor can be controlled.

Advantages and Limitations

The BC857C RFG offers many advantages over conventional transistors. It provides excellent performance in terms of gain, current gain, saturation voltage and voltage drop across the depletion layer, making it an ideal choice for applications requiring high-speed and low-power consumption. It has a wide operating frequency range, making it suitable for a variety of wireless applications. In addition, it has a low-noise operation and is highly linear.

However, the BC857C RFG has certain disadvantages as well. It cannot be used in high-current applications due to its low breakdown voltage, and its operation is sensitive to temperature variations. In addition, its linearity decreases at higher voltages, which limits its use as a linear amplifier.

Conclusion

In summary, the BC857C RFG is an ideal choice for short-range wireless data communication applications. It offers excellent performance in terms of gain, current gain, saturation voltage and voltage drop across the depletion layer. It has a wide operating frequency range, making it suitable for a variety of wireless applications. In addition, it is highly linear and has a low-noise operation. However, it is not suitable for high-current applications, and it has susceptible to temperature variations.

The specific data is subject to PDF, and the above content is for reference

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