BC858AW-G

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BC858AW-G transistors are a part of the single bipolar junction transistor (BJT) family, specifically in the BC800 series. This series is known as the epitaxial planar silicon transistor, as they are a type of BJT that has a thin layer of silicon grown above another silicon wafer, across which three separate regions of silicon are diffused. This creates a transistor with a flat, rectangle or square base region, with two separate emitter and collector regions above the base.

BC858AW-G transistors are designed for use in general purpose applications. This means that the transistor can be used for a wide variety of tasks, such as amplifying a signal, switching electricity between two different states, controlling the flow of electricity, and providing a current gain or voltage gain. These transistors are perfect for applications where an optimal performance is needed without having to use numerous transistors to achieve this performance.

The BC858AW-G has a breakdown voltage of 60V, an emitter-collector saturation voltage of 0.2V and a maximum collector current of 150mA. The transistors have a minimum gain of 110 at a 10mA emitter current. When used in a circuit, the BC858AW-G is able to run at a maximum power of 1.5W. The transistor is also capable of running efficiently in a temperature range of -40°C to +135°C.

When a voltage is applied to the base of the BC858AW-G transistor, it will open the circuit, allowing current to flow from the collector to the emitter. This phenomenon is known as current gain or hFE, and the BC858AW-G transistors have a minimum current gain of 110 at a 10mA emitter current. This means that for every 10mA of current flowing out from the emitter, the transistor can amplify it to be 110mA at the collector.

The power rating of a transistor is an important determining factor when selecting which type to use in a circuit. The BC858AW-G has a power dissipation of 1.5W and a thermal resistance of 250⁰C/W. This means that the transistor can operate at a maximum of 375⁰C without damage. The BC858AW-G also has a low reverse transfer capacitance, allowing it to effectively handle frequency ranges up to 100MHz.

The collector-emitter breakdown voltage of the BC858AW-G is 60V, meaning it can be used in a wide range of circuits and applications. The transistor can also handle high collector currents, up to 150mA, which makes it great for use in applications that require high current amplification, such as power amplifiers or other types of signal amplification.

The BC858AW-G transistor is an ideal choice for general purpose applications due to its low cost and high performance. Its ability to operate efficiently in a wide range of temperatures, handle high collector-emitter voltage, and amplify signals make it an attractive solution for all types of applications. With its small size, low power dissipation, and high frequency capabilities, the BC858AW-G transistor is a great choice for designers looking to incorporate a general purpose BJT into their circuit.

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