Allicdata Part #: | BC856ALT1OSCT-ND |
Manufacturer Part#: |
BC856ALT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 65V 0.1A SOT23 |
More Detail: | Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 300m... |
DataSheet: | BC856ALT1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 65V |
Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 125 @ 2mA, 5V |
Power - Max: | 300mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BC856ALT1 is a PNP silicon epitaxial planar bipolar transistor that features an advanced geometry and an optimized design process, making it ideal for use in the fields of switching, linear, and industrial applications. This device has a low saturation voltage, a high switching frequency, and a wide range of collector current ratings. It also offers outstanding linearity and stability in its operation.
The BC856ALT1 is rated at a maximum of 400 mA collector current, with a breakdown voltage of 17 volts and a maximum power dissipation of 500 mW. It has a PNP type package, with a base-emitter saturation voltage of 1.5 volts. The maximum switching frequency of the BC856ALT1 is 35 MHz, and its transition time is only 3 nS. This device has superior linearity, with a minimum linearity of 1.9 mV/mA for a collector-emitter voltage of 1.3 V.
The BC856ALT1\'s working principle is based on the basic operation of bipolar transistors. A PNP bipolar transistor consists of a base, collector and emitter, with the emitter connected to a positive voltage. Current flows from the collector to the base, and from the base to the emitter, creating the basis of the transistor\'s operation. When the base is forward biased and a small current is allowed to flow through it, a larger current flows from collector to emitter.
The BC856ALT1 also has excellent noise immunity, due to its low thermal noise and high power gain. It is capable of handling wide input signals and providing high-current and low-voltage outputs. This makes it ideal for use in audio systems, power supplies and other industrial applications. Additionally, the BC856ALT1 features an enhanced frequency response and can effectively handle a wide range of input signals, providing excellent results.
The BC856ALT1 offers superior performance and reliability, making it an attractive choice for a variety of applications. Its low-saturation voltage and high-switching frequency make it ideal for use in switching, linear and industrial applications. With its enhanced linearity, superior noise immunity and high power gain, it is well suited for use in audio systems, power supplies, and a wide range of industrial applications. This device offers a great option for users looking for premium performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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