BC856BDW1T3G Allicdata Electronics

BC856BDW1T3G Discrete Semiconductor Products

Allicdata Part #:

BC856BDW1T3GOSTR-ND

Manufacturer Part#:

BC856BDW1T3G

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2PNP 65V 0.1A SOT363
More Detail: Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 10...
DataSheet: BC856BDW1T3G datasheetBC856BDW1T3G Datasheet/PDF
Quantity: 1000
1 +: $ 0.01600
10 +: $ 0.01552
100 +: $ 0.01520
1000 +: $ 0.01488
10000 +: $ 0.01440
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 380mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Description

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The BC856BDW1T3G is a useful device in the world of transistors, specifically those that are bipolar junction transistors (BJT) and part of an array. This device houses eight NPN transistors in a single surface mount package, allowing for plenty of space savings. The BC856BDW1T3G is designed for typical low-power applications, providing high power and linear voltage gain.

In order to understand the application field and working principle of the BC856BDW1T3G, it’s important to first have a basic understanding of the features and functions that make up a bipolar junction transistor array. Bipolar junction transistors are semiconductor devices that are comprised of three layers. This device is divided into the base, the emitter, and the collector. The base is used to control the current flow between the emitter and the collector, while the emitter is used to allow the current. The collector functions as the output.

The BC856BDW1T3G consists of eight NPN transistors in a single package, allowing for high power and linear voltage gain. The collector-emitter operating voltage range is from -1.0V to 50V, the base-emitter voltage range is from -0.8V to 6V, and the collector-emitter saturation voltage range is from 0V to 0.4V. The breakdown voltage is between 4V and 10V, and the maximum collector current is 200mA.

The application field of the BC856BDW1T3G consists mainly of systems that require an occasional low-power input, such as consumer electronics, computers, and automotive applications. For example, the BC856BDW1T3G can be used in a computer’s power supply unit (PSU) or in mobile phones. The device has also been used in the past in video game consoles, DVD players, and audio amplifiers.

The working principle of the BC856BDW1T3G can best be summarized as a current-sensing amplifier. This means that when a small current flows through the device, its output voltage is amplified. The BC856BDW1T3G allows for high gain with low power dissipation, making it an ideal choice for many applications.

The BC856BDW1T3G is a valuable tool for achieving power and linear voltage gain in low-power applications. Its eight NPN transistors in a single surface-mount package allows for plenty of space saving, while its current-sensing amplifier allows for high gain with low power dissipation. Whether used in consumer electronics, computers, or automotive applications, the BC856BDW1T3G can be a great benefit to anyone looking to save space while achieving reliable results.

The specific data is subject to PDF, and the above content is for reference

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