| Allicdata Part #: | BC856W,135-ND |
| Manufacturer Part#: |
BC856W,135 |
| Price: | $ 0.01 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | TRANS PNP 65V 0.1A SOT323 |
| More Detail: | Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 200m... |
| DataSheet: | BC856W,135 Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.01191 |
Specifications
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 65V |
| Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max): | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 125 @ 2mA, 5V |
| Power - Max: | 200mW |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | SOT-323-3 |
| Base Part Number: | BC856 |
Description
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Introduction to BC856W Transistor
The BC856W is a high-speed, low-noise NPN bipolar junction transistor (BJT). The BC856W is versatile and commonly used in wide range of both industrial and consumer electronic products such as amplifiers, oscillators, pre-amps, radios and more.Structural Features of BC856W Transistor
The BC856W is a three-layer semiconductor device made from silicon wafers. It has two types of semiconductor layers: the P-type layer, which contains positive charges, and the N-type layer, which contains negative charges. The third layer, called the "base" is made of an insulating material and serves to control the flow of electric current between the P-type and N-type layers.The BC856W has an emitter-base voltage drop of 6 volts, a collector-base voltage drop of 8 volts and a base current of 200mA. The transistor is designed to handle up to 3 amps of collector current and 1 watt of power.BC856W Transistor Configuration
The BC856W transistor comes in two different configurations, the NPN and PNP. In an NPN transistor configuration, the base is connected to the emitter, while in a PNP configuration, the base is connected to the collector. When the base is charged with a small amount of current (less than 200mA), a flow is created between the emitter and collector. This current flow is what allows the transistor to amplify or switch electrical signals.BC856W Application Fields and Working Principle
Due to its versatility and high-speed performance, the BC856W is highly functional in a wide variety of applications. It can be used as an amplifier, an oscillator, or a switching device. As an amplifier, the BC856W increases the voltage or current of a signal. This amplification can be used in any number of circuits such as audio systems, radio, or computers. When used as an oscillator, the transistor creates a continuous waveform with a specific frequency. Oscillators have a range of applications, such as in quartz watches, radios, and surveillance systems. The BC856W can also be used as a switch. By controlling the base current, the transistor can be used to switch between two different power sources. This can be used in circuits where large amounts of power need to be switch quickly and efficiently.Conclusion
The BC856W transistor is a versatile, high-speed, low-noise NPN bipolar junction transistor. It is useful in a wide range of applications such as amplifiers, oscillators, pre-amps, radios, and as a switch. It is easy to configure and install, and is a popular choice for any project.The specific data is subject to PDF, and the above content is for reference
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BC856W,135 Datasheet/PDF