Allicdata Part #: | BC857CLT1OS-ND |
Manufacturer Part#: |
BC857CLT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 45V 0.1A SOT23 |
More Detail: | Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 300m... |
DataSheet: | BC857CLT1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 420 @ 2mA, 5V |
Power - Max: | 300mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
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BC857CLT1 Application Field and Working Principle
BC857CLT1 is a Bipolar Junction Transistor (BJT) device, offering a single transistor in a mini SMD package. It is made by NXP Semiconductors, and has potential applications in audio frequency (AF) amplifiers, general purpose switching and low noise amplifiers. Due to its low collector-emitter saturation voltage, the BC857CLT1 is ideal for low power applications.
Structure of the BC857CLT1
The BC857CLT1 consists of an NPN type bipolar junction transistor device. It consists of three layers, based on which it runs. There are two p-type layers and one n-type layer present in the transistor. It has two P-type regions as the base layers, and one N-type region as the emitter layer. The collector layer is also N-type and is the outermost layer. The two base layers are connected through two different base electrodes, and when current flows through the electrodes, it generates a thin depletion layer in the p-n junction which is formed between the two base layers and the emitter layer.
Working Principle of the BC857CLT1
The working principle of the BC857CLT1 is based on the flow of charge carriers. When current passes through the base electrodes, a thin depletion layer is generated in the base-emitter junction. This causes the p-n junction to act like a diode, and blocks the flow of current from the collector side to the emitter side. However, it allows the electrons from the base layer to flow through it and into the collector layer. When the base current increases, more electrons move from the base to the collector side, creating an amplification effect. When the base current is reduced, fewer electrons reach the collector side, reducing the overall current flow.
Applications of the BC857CLT1
The BC857CLT1 can be used in a variety of applications, including audio frequency (AF) amplifiers, general purpose switching, low noise amplifiers, as well as transistor oscillators. The BC857CLT1 is especially suited for low power applications due to its low collector-emitter saturation voltage. The device is also capable of performing at very high speed, making it suitable for high speed switching applications. It is also suitable for logic and interface circuits, due to its low impedance and high switching speed.
Conclusion
The BC857CLT1 is a single transistor in a mini SMD package, made by NXP Semiconductors. It has potential applications in audio frequency (AF) amplifiers, general purpose switching and low noise amplifiers. It features high speed and low power performance, making it ideal for low power applications. It is also suitable for logic and interface circuits, due to its low impedance and high switching speed.
The specific data is subject to PDF, and the above content is for reference
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