Allicdata Part #: | BC858BWT1GOSTR-ND |
Manufacturer Part#: |
BC858BWT1G |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 30V 0.1A SOT-323 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 150m... |
DataSheet: | BC858BWT1G Datasheet/PDF |
Quantity: | 15000 |
3000 +: | $ 0.01838 |
6000 +: | $ 0.01658 |
15000 +: | $ 0.01442 |
30000 +: | $ 0.01298 |
75000 +: | $ 0.01154 |
150000 +: | $ 0.00961 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 220 @ 2mA, 5V |
Power - Max: | 150mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Base Part Number: | BC85**W |
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BC858BWT1G is a high-performance NPN/PNP general-purpose transistors. It is a type of bipolar junction transistor (BJT). They are commonly used in many applications, including amplification, switching, and the implementation of digital circuits.
The BC858BWT1G device is designed for wide range of applications. It features low collector-emitter saturation voltage, high breakdown voltage, high hFE linearity, and high gain bandwidth product when operating at high frequency. It is suitable for applications where a low voltage drop is desired, such as LED drivers, motor drivers, and automotive applications.
The BC858BWT1G is constructed with diffused resistors, which make it suitable for automotive and other environments where high stability and reliability are needed. It has a maximum collector current of 700mA and collector-emitter voltage of 80V. The device has a package size of 3.2mm x 2.6mm x 0.9mm and operating temperature range of -65°C to 150°C.
The BC858BWT1G device is a NPN/PNP general-purpose transistors. It works by using the properties of electrons and holes, as well as a doping process, in order to create a conductive channel between source and drain. When current is applied to the source, the depletion region between source and drain decreases, allowing electrons and holes to move freely between the two. This allows current to flow from source to drain.
When the electron flow reaches a certain level, it starts to increase in response to the increased current, creating an avalanche process. This process is known as the avalanche effect, and it allows the transistor to amplify a signal. This amplification process is very useful for many applications, such as audio amplifiers, digital circuits, and power amplifiers.
The BC858BWT1G also features high input impedance and low output impedance, which makes it ideal for applications such as power switching and amplifier circuits. Additionally, its low capacitance enables it to switch very quickly, making it suitable for high-frequency applications.
Overall, the BC858BWT1G is a versatile and reliable general-purpose transistor. Its wide range of features make it suitable for many different applications. It is an ideal choice for LED drivers, motor drivers, switching applications, amplifiers, and digital circuits.
The specific data is subject to PDF, and the above content is for reference
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