
Allicdata Part #: | BC858CMTFTR-ND |
Manufacturer Part#: |
BC858CMTF |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 30V 0.1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 100mA 150MHz 310m... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.03000 |
10 +: | $ 0.02910 |
100 +: | $ 0.02850 |
1000 +: | $ 0.02790 |
10000 +: | $ 0.02700 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 420 @ 2mA, 5V |
Power - Max: | 310mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | BC858 |
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The BC858CMTF is a miniature, NPN bipolar junction transistor (BJT) manufactured by NEC. The BC858CMTF is a subminiature NPN transistor for low noise general purpose amplifier. It is available in a 3-Lead TO-92 package making it ideal for use in space constrained high density mounting applications such as those found in consumer electronics and portable or miniature devices. The BC858CMTF has a high voltage breakdown voltage rating of 70V and a low saturation voltage which make it suitable for high power, low noise electronics applications. It features an integral thermal protection circuit which makes it suitable for use in high temperature environments.
The BC858CMTF is a small signal transistor that is suitable for use in a variety of applications including amplifier circuits, switching and driver circuits, power supply circuits, and audio circuits. The transistor is constructed of an N-type silicon epitaxial planar junction over a P-type substrate. The collector to emitter voltage is rated at 70V and the collector to base voltage is rated at 60V, making it suitable for use in a wide range of higher voltage applications. The maximum current gain of the device is 100 hFE and the maximum power dissipation is 500 mW. The maximum operating temperature is 150°C and the storage temperature range is -20°C to 150°C.
The working principle of the BC858CMTF is based on the principle of a bipolar junction transistor. A bipolar junction transistor consists of three layers of semiconductor material, two of which are doped with impurities to form an N-type and a P-type semiconductor. When these two layers are connected together, they form a P-N junction. When current flows through this junction, it causes a current to flow through the transistor, which is referred to as a collector current. This current flow is used to control the output current in a circuit.
The BC858CMTF can be used in a wide range of applications. It is suitable for use in amplifier circuits, switching and driver circuits, power supply circuits, and audio circuits. In amplifier circuits, the transistor can be used to amplify small signals. In power supply circuits, it can be used to convert AC voltage to DC voltage with increased efficiency. In audio circuits, the device can be used to amplify sound signals. In switching and driver circuits, the transistor can be used to control the flow of current.
The BC858CMTF is a miniaturized NPN transistor with several advantages. It has a low saturation voltage, a high voltage breakdown voltage, and an integral thermal protection circuit, making it a suitable choice for high power, low noise applications. In addition, it has a maximum current gain of 100 hFE and a maximum power dissipation of 500 mW, making it suitable for use in a wide range of applications. Furthermore, it is available in a 3-Lead TO-92 package, making it ideal for use in space constrained high density mounting applications such as those found in consumer electronics and portable or miniature devices.
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