BC858W,115 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-6199-2-ND |
Manufacturer Part#: |
BC858W,115 |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP 30V 0.1A SOT323 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 200m... |
DataSheet: | BC858W,115 Datasheet/PDF |
Quantity: | 18000 |
3000 +: | $ 0.01518 |
6000 +: | $ 0.01370 |
15000 +: | $ 0.01191 |
30000 +: | $ 0.01072 |
75000 +: | $ 0.00953 |
150000 +: | $ 0.00794 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 125 @ 2mA, 5V |
Power - Max: | 200mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
Base Part Number: | BC858 |
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BC858W,115
BC858W,115 is a NPN-type (negative-positive-negative) bipolar junction transistor, and is commonly used in the implementation of amplifier and switching circuits. The BC858W,115 has been available for many years and is relatively easy to obtain due to its low cost.
Application Field
The BC858W,115 is predominantly a switching device and can be used to control current and voltage levels in a variety of electrical circuits. It can be used in many different applications such as switching power supplies, switched-mode supplies, power transistors, DC-DC converters, and signal inverters.
It is also useful in low voltage applications such as logic gates, current mirrors, voltage followers, mixers, phase detectors, and various analog switches.
Working Principle
The BC858W,115 uses the physics of electrons as its core operating principle. It is comprised of three layers of doped semiconductor material, each of which has a different electrical charge. The N-type layers are positively charged, the P-type layers have a negative charge, and the neutral layer has no charge at all.
When the base of the transistor receives a small electric current, the current is amplified in the collector-emitter region. This is due to the movement of electrons from the N-type layer to the P-type layer in the transistor. This movement creates a current which is amplified by the transistor, and can be used to switch between various states.
The BC858W,115 is designed to handle voltages up to 30 volts and a collector current of up to 500mA. It can also operate in temperatures ranging between -65°C and 150°C. The transistor can withstand large voltage spikes, making it suitable for use in a variety of high voltage environments.
Conclusion
The BC858W,115 is a widely available and very reliable transistor with a wide variety of useful applications. It is relatively low cost and can withstand large spikes in voltage. It can be used to control the current and voltage levels across a range of electrical circuits, making it a popular choice for many electronics projects.
The specific data is subject to PDF, and the above content is for reference
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