BC859C,235 Allicdata Electronics
Allicdata Part #:

BC859C,235-ND

Manufacturer Part#:

BC859C,235

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 30V 0.1A SOT23
More Detail: Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 250m...
DataSheet: BC859C,235 datasheetBC859C,235 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02907
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: BC859
Description

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BC859C and 235 are two types of transistors that fall within the Bipolar Junction Transistor (BJT) Single category. In this article, the application field and working principle of both types of transistors will be discussed.

BC859C is a general purpose NPN transistor and is often used to switch or amplify signals. It has a DC current gain of 40 or higher and can be used in a variety of signal switching applications. It is also very popular among hobbyists who use it in various construction projects. The working principle of BC859C is based on the semiconductor effect of two oppositely charged layers of silicon. When an electric current flows through the transistor, one layer, the "collector", passes the current to the other layer, the "emitter". The impurity-free silicon layer between the collector and the emitter is called the base. The electric current flowing through the collector, then passes through the base before arriving at the emitter. The characteristics of the electric current flowing through the transistor is strictly determined by the resistances of the collector, base and emitter.

235 is also an NPN transistor and is mainly used as an amplifier. It has a DC current gain of 60 or higher and can be used to amplify various kinds of signals. It is often used in combination with other transistors to construct amplifiers. The working principle of 235 is the same as BC859C but it has a higher gain. When the electric current flows through the transistor, it passes through the collector and the base before arriving at the emitter. The size of the current flowing through the base is determined by the ratio of the resistances of the collector and the emitter. Thus, the larger the ratio, the higher the gain of the transistor.

Both BC859C and 235 transistors can be used for signal switching and amplification applications. They both use the same semiconductor effect of two oppositely charged layers of silicon, but 235 has a higher gain due to its higher ratio of collector and emitter resistances. They are popular among hobbyists and professionals alike and are used in a variety of construction projects and electronic devices.

The specific data is subject to PDF, and the above content is for reference

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