Allicdata Part #: | BF998E6327HTSA1TR-ND |
Manufacturer Part#: |
BF998E6327HTSA1 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 12V 200MA SOT-143 |
More Detail: | RF Mosfet N-Channel 8V 10mA 45MHz 28dB PG-SOT143-... |
DataSheet: | BF998E6327HTSA1 Datasheet/PDF |
Quantity: | 12000 |
3000 +: | $ 0.08015 |
6000 +: | $ 0.07529 |
15000 +: | $ 0.07043 |
30000 +: | $ 0.06460 |
75000 +: | $ 0.06217 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | N-Channel |
Frequency: | 45MHz |
Gain: | 28dB |
Voltage - Test: | 8V |
Current Rating: | 30mA |
Noise Figure: | 2.8dB |
Current - Test: | 10mA |
Power - Output: | -- |
Voltage - Rated: | 12V |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | PG-SOT143-4 |
Base Part Number: | BF998 |
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Transistors - FETs, MOSFETs - RF
BF998E6327HTSA1 is one of a wide family of Field Effect Transistors (FETs) and is used in many electronic applications. FETs are electronic semiconductor devices that rely on an electric field to control current changes and to alter their conductivity. In particular, the BF998E6327HTSA1 is a Radio Frequency (RF) MOSFET, which is a type of field effect transistor (FET) designed to operate in the radio frequency range.
BF998E6327HTSA1 devices are becoming more common in radio frequency communications and radio frequency (RF) circuits. They are used to control the flow of current in an RF circuit, allowing engineers to accurately regulate the desired RF performance. Due to the quality of its performance and its convenience, this particular device is often used for high frequency applications, such as up to 4 GHz. It is capable of handling high power levels with an effective gate bias, and has a typical power gain of about 20 dB.
The working principle of BF998E6327HTSA1 is fairly simple. It is constructed from metal oxide semiconductor (MOS) field effect technology, which means it consists of a thin layer of semiconductor material and metal gate contacts. The source and drain terminals contain conductive material, while the gate terminal is insulated. When a voltage is applied to the gate, a current is induced between the source and drain, allowing current to flow. This allows the FET to accurately regulate the amount of current flow in the RF circuit.
BF998E6327HTSA1 is a highly efficient solution for radio-frequency applications due to its ability to handle large power levels and its ability to accurately control the amount of current flow. This MOSFET is ideal for controlling the output of a radio-frequency signal, or for use in transmitters and receivers. Its low noise figure, low power consumption, and small size make it ideal for a wide range of RF applications.
In conclusion, BF998E6327HTSA1 is a top choice for many high and low frequency applications. It is a high quality, efficient solution and is often used in RF circuitry and radio frequency communications. Its ability to accurately control the current flow makes it a great option for engineers who need precision and accuracy in their RF design.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BF998E6327HTSA1 | Infineon Tec... | 0.09 $ | 12000 | MOSFET N-CH 12V 200MA SOT... |
BF992,215 | NXP USA Inc | 0.15 $ | 1000 | MOSFET NCH DUAL GATE 20V ... |
BF999E6327HTSA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH RF 20V 30MA S... |
BF998WR,115 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 12V 30MA SOT3... |
BF996S,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 20V 30MA SOT1... |
BF998R,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 12V 30MA SOT1... |
BF998R,235 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 12V 30MA SOT1... |
BF998,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET NCH DUAL GATE 12V ... |
BF998,235 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 12V 30MA SOT1... |
BF994S,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET NCH DUAL GATE 20V ... |
BF991,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET NCH DUAL GATE 20V ... |
BF998RE6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH RF 12V 30MA S... |
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