Allicdata Part #: | 568-6180-2-ND |
Manufacturer Part#: |
BF996S,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 20V 30MA SOT143B |
More Detail: | RF Mosfet N-Channel Dual Gate 15V 10mA 200MHz 25dB... |
DataSheet: | BF996S,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 200MHz |
Gain: | 25dB |
Voltage - Test: | 15V |
Current Rating: | 30mA |
Noise Figure: | 1dB |
Current - Test: | 10mA |
Power - Output: | -- |
Voltage - Rated: | 20V |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143B |
Base Part Number: | BF996 |
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BF996S,215 Application Field and Working Principle
BF996S,215 is a type of Field Effect Transistor (FET). It belongs to a group of RF (Radio Frequency) FETs, which are specially designed to perform in high frequency applications. The BF996S,215 is a depletion-type MOSFET, which operates at an RF frequency of up to 250 MHz.
Application Field
The BF996S,215 is most commonly used in radio frequency (RF) circuits, such as those for wireless applications. In RF amplifier circuits, this device is often used as the input or output stage, or in a driver circuit for intermediate frequency (IF) applications. As it is designed to perform in a higher frequency range, it can also be used in oscillator and mixer circuits.
Aside from RF signal applications, this FET can also be used as a power amplifier in low frequency applications. Furthermore, it can be used to control the signal levels in audio circuits, such as those found in car audio systems, televisions and other home theatre equipment.
Working Principle
The BF996S,215 FET is a depletion-type MOSFET. This type of FET uses the gate-to-source voltage to control the device\'s conductivity. When a positive voltage is applied to the gate of the FET, electrons move from the channel and into the channel, increasing the channel\'s resistance. Conversely, when a negative voltage is applied to the gate of the FET, electrons are drawn out of the channel, decreasing the channel\'s resistance.
As with all FETs, the BF996S,215 is a voltage-controlled device, meaning that its output is a function of the voltage applied to its gate. This voltage can be manipulated by an external signal or by other circuits, allowing for precise control of current.
The BF996S,215 has a power handling capability of up to 200 mW, which makes it suitable for many applications. It also has a high gain characteristic, which makes it a suitable device for high-frequency RF applications.
Conclusion
The BF996S,215 is a high-performance RF FET designed for use in high-frequency applications. It is a depletion-type MOSFET, which allows for precise control of current by manipulating the voltage applied to its gate. Its high-power handling capabilities and high gain make it a suitable device for many RF amplifier and oscillator circuits. Additionally, it can also be used for audio applications, such as in car audio systems.
The specific data is subject to PDF, and the above content is for reference
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