Allicdata Part #: | 568-6181-2-ND |
Manufacturer Part#: |
BF998R,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 12V 30MA SOT143R |
More Detail: | RF Mosfet N-Channel Dual Gate 8V 10mA 200MHz SOT... |
DataSheet: | BF998R,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 200MHz |
Gain: | -- |
Voltage - Test: | 8V |
Current Rating: | 30mA |
Noise Figure: | 0.6dB |
Current - Test: | 10mA |
Power - Output: | -- |
Voltage - Rated: | 12V |
Package / Case: | SOT-143R |
Supplier Device Package: | SOT-143R |
Base Part Number: | BF998 |
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BF998R,215 is a field effect transistor (FET) which belongs to the family of radio frequency (RF) transistor. It has ratings of 180 Ma current, 40V voltage and 40MHz frequency.
Application Field:
BF998R,215 is primarily used in the RF circuits, audio circuits, and digital signal processors (DSP) for amplification, switching and signal conditioning. It is also used in the circuits that require small-signal switching, and has been widely used in the consumer electronics and automotive industry due to its low cost and high performance.
Working Principle:
The working principle of a FET is based on the behavior of charge carriers in a semi-conductor. It consists of three terminals, namely source, gate and drain. The gate terminal is positively or negatively charged to allow or prevent the movement of charge carriers. When a positive gate voltage is applied to the gate terminal, electrons in the semi-conductor are attracted towards the gate and hence current starts to flow from the source to the drain terminal. This movement of electrons constitutes the working principle of a FET.
Advantages:
BF998R,215 has several advantages over other types of transistors. Firstly, it has low power consumption, thus reducing power loss in the circuit. Secondly, it has a high input impedance which makes it ideal for signal conditioning. Thirdly, it has very low noise levels, thus making it suitable for precision circuits. Lastly, it is capable of producing high gain which is beneficial for the amplification of weak signals.
Disadvantages:
The single biggest disadvantage of BF998R,215 is its relatively slow switching speed. It is not suitable for fast switching circuits and its slow switching speed can also affect the performance of some circuits. Furthermore, it is prone to heat dissipation and is sensitive to electrostatic discharges.
Conclusion:
BF998R,215 is a low-cost, high-performance FET which is used in various applications such as RF circuits, audio circuits, and digital signal processors. It has several advantages such as low power consumption, high input impedance, low noise levels, and high gain. However, its slow switching speed and sensitivity to electrostatic discharges are its major disadvantages.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BF998E6327HTSA1 | Infineon Tec... | 0.09 $ | 12000 | MOSFET N-CH 12V 200MA SOT... |
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