BF994S,215

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	N-Channel Dual Gate
Frequency:	200MHz
Gain:	25dB
Voltage - Test:	15V
Current Rating:	30mA
Noise Figure:	1dB
Current - Test:	10mA
Power - Output:	--
Voltage - Rated:	20V
Package / Case:	TO-253-4, TO-253AA
Supplier Device Package:	SOT-143B
Base Part Number:	BF994

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BF994S,215 Application Field and Working Principle

BF994S,215 is a high-frequency silicon N-channel moderate power field-effect transistor introduced by Philips Semiconductor in the late 1990s which was increasingly used in RF circuits ranging from 10MHz to 1GHz. It is available both in through-hole and surface-mount packages. The BF994S,215 helps to deliver high performance while keeping its cost low. The device is a versatile option for many electronics professionals and makes it perfect for applications that require superior speed and reliability.Additionally, the BF994S,215 is rated an extended temperature range -55°C to +215°C, making it perfect for harsh environment applications. This makes the device suitable for use in high temperature areas or areas where it may be exposed to vibrations or fluctuations in temperature. The high frequency performance of the device makes it perfect for use in wireless communications and for applications that operate in the wide range of frequencies.The main power capability of this device is rated at 1.7 watts and it has a current gain hFE of 15, making it suitable for a range of high power applications. The specific application field of this device is varied and includes telephone systems, base station systems, transceiver equipment, cable modems, Bluetooth technology, amplifiers, digital broadcast systems, and last, but not least, robotics.To understand the working principle of the BF994S,215, it is important to understand the basics of field effect transistors. Field effect transistors, or FETs, are types of semiconductors that consist of a source, a gate, and a drain. A small voltage is applied to the gate voltage, which creates an electric field level between source and drain. This electric field then modulates the flow of electric current in a circuit, allowing it to be controlled without the need for a lot of power.This field effect behavior is what makes the BF994S,215 so attractive. Due to its high frequency characteristics, the device makes it possible for electronic components to operate within the higher range of frequencies, allowing for increased efficiency and improved performance. Additionally, due to the characteristics of the FET, the device is capable of providing an extremely low power consumption.The BF994S,215 also has a number of other characteristics that benefit users. The device is manufactured using advanced MicroCell technology that makes it highly reliable and minimizes the need for packaging and assembly. Additionally, the device has a number of advanced features such as wide linearity, high frequency response, improved temperature stability and wide dynamic range, which makes it an ideal choice for many different applications.As the BF994S,215 is a field effect transistor, it has the benefit of being an extremely versatile and reliable transistor. Due to its low cost and wide range of applications, the BF994S,215 is increasingly used in a variety of electronic products, ranging from audio amplifiers to cable modems. Furthermore, due to its high frequency characteristics and reliable performance, this device can be used in applications that require extreme precision and accuracy. The BF994S,215 is an ideal choice for electronic professionals who are looking for a reliable and cost-effective transistor for their applications.

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