BF998RE6327HTSA1

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The BF998RE6327HTSA1 is a high performance RF field-effect transistor (FET) from STMicroelectronics. This transistor is especially designed for linear amplification and switching applications. The key features of this device include an ultra-low noise figure, low intermodulation distortion, high linearity, and low gate output capacitance.

The main application for the BF998RE6327HTSA1 is for use in radio frequency (RF) applications where linearity and low noise figure are important. Typical applications include amplifiers, receivers, and switching circuits. This transistor is also suitable for industrial, medical, military, and aerospace applications.

The BF998RE6327HTSA1 is a n-channel enhancement-mode FET that is designed specifically for RF applications. It works on the principle of a transistor amplifier, wherein a small current or voltage applied to the gate dictates the output of the drain/source. The device is also designed to have minimal capacitance in the gate area to reduce high frequency noise and to reduce losses in the amplifier.

This device utilizes an advanced process technology for improved device characteristics and enables high stability and reproducibility of the FET\'s electrical characteristics over temperature. The BF998RE6327HTSA1 also features high voltage breakdown and high power handling capability.

The main features of the BF998RE6327HTSA1 make it an excellent choice for use in RF applications. It offers high gain and low noise figure, excellent linearity, low gate output capacitance, and high stability over temperature. The device is suitable for use in applications such as amplifiers, receivers, and switching circuits.

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