Allicdata Part #: | BF998R,235-ND |
Manufacturer Part#: |
BF998R,235 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 12V 30MA SOT143 |
More Detail: | RF Mosfet N-Channel Dual Gate 8V 10mA 200MHz SOT... |
DataSheet: | BF998R,235 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 200MHz |
Gain: | -- |
Voltage - Test: | 8V |
Current Rating: | 30mA |
Noise Figure: | 0.6dB |
Current - Test: | 10mA |
Power - Output: | -- |
Voltage - Rated: | 12V |
Package / Case: | SOT-143R |
Supplier Device Package: | SOT-143R |
Base Part Number: | BF998 |
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BF998R is a type of metal oxide semiconductor field-effect transistor (MOSFET). It has an operating frequency of up to 250MHz and a low voltage capability. It features high gate insulation resistance, low RDS(on) and low gate charge. This makes it suitable for a wide range of applications, including automotive, home appliance and communications devices.
Application Field
Some of the most common applications of BF998R are:
- Automotive sensors, such as speed and temperature sensors
- Home appliance control circuits
- Communications and networking equipment
- Industrial equipment and consumer electronics
- Audio and video systems
- RF amplifiers and mixers
- Medical electronics
- Computer peripherals and gaming consoles
MOSFETS are also used in consumer products, such as your car stereo, cell phone, and microwave oven.
Working Principle
BF998R is a four terminal device, featuring a source, gate, drain and bulk connections. The gate terminal is used to turn the device on and off, and the source and drain terminals are used to control the current. When the gate voltage is greater than the drain voltage, then a channel is formed in the MOSFET and current is allowed to flow from the source to the drain. When the gate voltage is less than the source voltage, the MOSFET is turned off, and no current flows.
The MOSFET also features high gate insulation resistance, which is essential for RF applications. High gate insulation resistance has the benefit of preventing unwanted current leakage, and ensuring signal integrity. High gate insulation resistance also has the benefit of reducing signal distortion.
BF998R is a versatile device and can be used for a variety of RF and amplifier applications. It has a relatively low operating voltage of 199V, which makes it suitable for many automotive and home appliance applications. It also has a low RDS(on) of 123 mOhms and a low gate charge of 5.5 nC. All of these factors make it an ideal device for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BF998E6327HTSA1 | Infineon Tec... | 0.09 $ | 12000 | MOSFET N-CH 12V 200MA SOT... |
BF992,215 | NXP USA Inc | 0.15 $ | 1000 | MOSFET NCH DUAL GATE 20V ... |
BF999E6327HTSA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH RF 20V 30MA S... |
BF998WR,115 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 12V 30MA SOT3... |
BF996S,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 20V 30MA SOT1... |
BF998R,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 12V 30MA SOT1... |
BF998R,235 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 12V 30MA SOT1... |
BF998,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET NCH DUAL GATE 12V ... |
BF998,235 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 12V 30MA SOT1... |
BF994S,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET NCH DUAL GATE 20V ... |
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BF998RE6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH RF 12V 30MA S... |
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