BF992,215

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	N-Channel Dual Gate
Frequency:	200MHz
Gain:	--
Voltage - Test:	10V
Current Rating:	40mA
Noise Figure:	1.2dB
Current - Test:	15mA
Power - Output:	--
Voltage - Rated:	20V
Package / Case:	TO-253-4, TO-253AA
Supplier Device Package:	SOT-143B
Base Part Number:	BF992

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The BF992,215 is a type of high frequency, laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) utilized by RF communication equipment, consumer electronics, and wireless communications. This type of transistor has a number of advantages which makes it a popular choice for efficient RF and high-frequency operation. The BF992,215 transistor is designed to have high-gain, linear operation, low noise figure, and good thermal stability. The use of a laterally diffused MOSFET (LDMOSFET) allows it to handle higher power levels than a comparable silicon bipolar junction transistor (BJT). The LDMOSFET also has a larger input impedance than the BJT, which helps to reduce the transistor’s power dissipation. In addition to its high gain and low noise figure, the BF992,215 also has a wide supply voltage range. This allows it to operate efficiently at both low and high voltages. The basic operating principle behind the BF992,215 is similar to that of any other field-effect transistor (FET). An electric charge, or "gate voltage" is applied to the source and drain connections of the transistor. This creates a potential barrier at the interface between the source and drain, allowing current to flow only when the potential of the gate is greater than the potential of the source and drain. This type of transistor is used in high-frequency operations as it can produce high current well beyond the frequency of a typical BJT.The BF992,215’s main application field is its use in high frequency communication equipment and consumer electronics. Examples of its utilization include broadband amplifiers, high frequency oscillators, frequency multipliers, RF power amplifiers, RF receiver front-ends, and receivers for cellular equipment. It is also used in automotive, industrial, and medical communication equipment, as well as various other RF applications.Due to its ability to operate at both high and low voltages with good thermal stability and linear performance, the BF992,215 is a valuable tool in many different communication fields. With its input impedance of up to 100 KΩ, it is ideal for use in both high power and low power RF and wireless communication applications. The low noise figure of the BF992,215 is also very attractive in applications where noise plays an important role.In conclusion, the BF992,215 is an efficient and reliable LDMOSFET that has a number of advantages. It has a wide supply voltage range allowing for efficient operation at both high and low voltages. It also features high-gain, thermal stability, and linear performance. All of these traits make the BF992,215 an ideal choice for RF and wireless communication equipment and consumer electronics.

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