Allicdata Part #: | BF998,235-ND |
Manufacturer Part#: |
BF998,235 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 12V 30MA SOT143 |
More Detail: | RF Mosfet N-Channel Dual Gate 8V 10mA 200MHz SOT... |
DataSheet: | BF998,235 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 200MHz |
Gain: | -- |
Voltage - Test: | 8V |
Current Rating: | 30mA |
Noise Figure: | 0.6dB |
Current - Test: | 10mA |
Power - Output: | -- |
Voltage - Rated: | 12V |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143B |
Base Part Number: | BF998 |
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The BF998,235 is an integrated circuit (IC) used to provide the essential functions of the field-effect self-operated circuit (FESO) in the field of radio frequency (RF). This component is designed to provide modulated radio frequency signal amplification with low power consumption and high stability. It is well-suited for applications in both long-distance and short-distance wireless communication.
The BF998,235 is composed of a silicon substrate and a collection of small transistors and diodes, which are arranged on the substrate in a specific way to form a self-operating circuit. The transistors and diodes act like switches that can switch on/off and modulate the RF signal. The RF signal is amplified once it passes through the transistors and diodes. The modulated RF signal is then amplified further by a set of amplifiers and RF filters before it is directed to its intended receiver.
The BF998,235 is designed to provide low power consumption and better stability even when subjected to a high degree of environmental noise. This makes it an ideal choice for applications such as remote control systems, cellular networks, satellite communications, and wireless LANs. Furthermore, it is also suitable for applications in medical devices, radio communication, broadcast radio, and automotive safety systems.
The BF998,235 is composed of a few essential components. These components include a power emitter, a gate resistor, a gate capacitor, a gate stopper, a body diode, and a set of amplifiers and filters. The power emitter supplies the gate resistor and capacitor with the current needed to generate the RF signals. The gate resistor and capacitor act as the tuning components of the IC by controlling the amount and frequency of the RF signal generated. The gate stopper, on the other hand, helps to maintain the current at a stable level. The body diode is responsible for providing the necessary biasing of the transistors and diodes.
The BF998,235 is designed to operate in the frequency range of 5.5–7.5 GHz. It has good noise performance when subjected to high environmental noise, and it is well-suited for both long-distance and short-distance wireless communication applications. This device is also manufactured in a small package which makes it suitable for space-constrained applications.
Overall, the BF998,235 is an excellent device for providing modulated radio frequency signal amplification with low power consumption and high stability. Its small size and high stability make it suitable for a wide range of applications in the RF field.
The specific data is subject to PDF, and the above content is for reference
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