Allicdata Part #: | 568-6182-2-ND |
Manufacturer Part#: |
BF998WR,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 12V 30MA SOT343R |
More Detail: | RF Mosfet N-Channel Dual Gate 8V 10mA 200MHz CMP... |
DataSheet: | BF998WR,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 200MHz |
Gain: | -- |
Voltage - Test: | 8V |
Current Rating: | 30mA |
Noise Figure: | 0.6dB |
Current - Test: | 10mA |
Power - Output: | -- |
Voltage - Rated: | 12V |
Package / Case: | SC-82A, SOT-343 |
Supplier Device Package: | CMPAK-4 |
Base Part Number: | BF998 |
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BF998WR,115 Application Field and Working Principle
BF998WR,115 is a type of transistor in the FETs, MOSFETs, RF category. It is a two-terminal electronic device primarily designed for processing radio frequency (RF) frequencies in excess of 1 GHz. It is mainly used in various high-frequency applications such as radio communications, television, broadcasting, and the like. This transistor is comprised of several components and processes which allow it to efficiently process high frequencies.
Function of BF998WR,115
The BF998WR,115 works by creating a field effect, wherein the electric field between the drain and source terminals act as a gate to control the amount of current that is allowed to flow through the transistor. By using this field effect, the amount of current that is allowed to flow through the transistor can be controlled or adjusted, enabling the device to function as a switch. Furthermore, this process also helps reduce noise and interference, making the transistor more efficient in processing high-frequency signals.
Structure and Materials
The structure of the BF998WR,115 is a monolithic integrated circuit (MIS) device. It is comprised of multiple layers, which makes it capable of effectively processing high frequencies. The layers are connected by transistors, and they help to form the channels and current paths in the device. The materials used in the device also play an important role, as they determine the performance and efficiency of the device. In this case, the device is composed of N-type and P-type materials, which are responsible for creating the field effect and controlling the current flow.
Applications and Performance
Due to its high-frequency processing capabilities, the BF998WR,115 is primarily used in radio frequency (RF) applications. It is also used in high-speed communication systems, as well as for radio and television broadcasting. Furthermore, the device also finds application in digital and analog television systems, in addition to other various high-frequency functions. As far as its performances are concerned, the device is able to offer excellent linearity and gain control, as well as a large operating temperature range. This allows the device to be used in a wide range of applications.
Conclusion
In conclusion, the BF998WR,115 is a two-terminal electronic device primarily designed for processing radio frequency (RF) frequencies in excess of 1 GHz. It is composed of multiple layers connected by transistors, which makes it capable of effectively processing high frequencies. It is mainly used in various high-frequency applications such as radio communications, television, broadcasting, and the like. Furthermore, the device is able to offer excellent linearity and gain control, as well as a large operating temperature range.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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