Allicdata Part #: | BFG505/X,235-ND |
Manufacturer Part#: |
BFG505/X,235 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS RF NPN 9GHZ SOT143B |
More Detail: | RF Transistor NPN 15V 18mA 9GHz 150mW Surface Moun... |
DataSheet: | BFG505/X,235 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 9GHz |
Noise Figure (dB Typ @ f): | 1.2dB ~ 1.9dB @ 900MHz ~ 2GHz |
Gain: | -- |
Power - Max: | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 6V |
Current - Collector (Ic) (Max): | 18mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143B |
Base Part Number: | BFG505 |
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The BFG505/X,235 is a transistor designed to be used in RF (Radio frequency) applications. It is a bipolar junction transistor (BJT) and has been designed with numerous features that make it suitable for a wide range of uses. The basic components of the transistor include an emitter, collector, and a base. In addition to these, the transistor also includes a number of terminals and leads for power, ground, and signal connections.
The BFG505/X,235 is a versatile transistor that can be used for a wide variety of applications, including high-speed switching, high-sensitivity signal detection, and low-level amplification. Additionally, the transistor can be used for RF signal detection, modulation, and radio communications. One of the key features of the BFG505/X,235 is its high frequency response, which makes it well suited for use in RF circuits.
The working principle of a bipolar junction transistor (BJT) is based on the effect of an electrical field on a semiconductor material. This material is commonly referred to as a base or emitter, and the electrical field is produced by the application of a small amount of current to the base. This current causes electrons in the semiconductor material to become increasingly excited, resulting in them trapping energy within the material. This energy, or charge, can then be controlled by varying the base current, thus allowing a signal to be amplified or modulated.
The BFG505/X,235 is specifically designed to be used in RF applications due to its high-performance characteristics. These include low-noise, high-sensitivity operation, wide operating temperature range, good linearity, and high frequency response. The transistor can operate over a wide range of frequencies and is particularly suited for high-frequency RF applications. The transistor is also capable of handling high-power signals, making it ideal for use in radio communications and other similar applications.
In conclusion, the BFG505/X,235 is designed to be used in RF applications and it provides a range of features that make it suitable for a wide range of uses. Its high-frequency response, low-noise, and high-sensitivity operation make it especially well suited for RF applications. In addition, the transistor\'s wide operating temperature performance and good linearity also make it a versatile candidate for use in a variety of RF applications.
The specific data is subject to PDF, and the above content is for reference
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