BFG540W,115 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	9GHz
Noise Figure (dB Typ @ f):	1.3dB ~ 1.8dB @ 900MHz
Gain:	--
Power - Max:	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 40mA, 8V
Current - Collector (Ic) (Max):	120mA
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-343 Reverse Pinning
Supplier Device Package:	4-SO
Base Part Number:	BFG540

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Introduction

The BFG540W,115 is a commonly used radio-frequency (RF) bipolar junction transistor (BJT). It has been especially designed for use in RF applications with high power output and low noise figure. With its wide bandwidth and high linearity, it is suitable for many applications, ranging from small-signal amplification to power amplification for various uses. This article will discuss the application field and working principle of the BFG540W,115.

Application Field

The BFG540W,115 is an ideal transistor for a variety of RF applications, including cellular base stations, point-to-point microwave radios, land-mobile radios, and satellite communications. It is versatile enough to be used in low-frequency RF and baseband systems, as well as in high-frequency applications.In addition to its usage as an RF amplifier, the BFG540W,115 can also be used as a switch. With its low-on-resistance and low-switching times, it is ideal for speed-critical applications, such as satellite and base-station transceivers.

Working Principle

The BFG540W,115 is a NPN-type transistor, which consists of three internally connected layers of doped semiconductor material: the emitter, base, and collector. When a small current is applied to the base and positive voltage is applied to the collector, electrons from the emitter are attracted to the collector and an open-circuited current path is established from the collector to the emitter. This is known as forward-bias and it is what enables a transistor to act as an amplifier.The amount of amplification achieved depends on a number of factors such as the current flowing through the device and the amount of resistance in the collector circuit. The amplification factor (commonly referred to as hFE) of the BFG540W,115 depends primarily on its two major parameters: the ratio of the collector current to the base current (IC/IB) and the turn-on voltage (VT). The BFG540W,115 can provide up to an hFE of 30 when operated under the ideal conditions.

Conclusion

The BFG540W,115 is a versatile transistor that can be used in a variety of RF applications. With its high-power output and wide frequency range, it is suitable for amplification and switching. Its low-on-resistance and low-switching times make it ideal for speed-critical applications. Finally, the BFG540W,115\'s hFE of up to 30 makes it an excellent choice for many different applications.

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