Allicdata Part #: | 568-1985-2-ND |
Manufacturer Part#: |
BFG591,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 15V 7GHZ SOT-223 |
More Detail: | RF Transistor NPN 15V 200mA 7GHz 2W Surface Mount ... |
DataSheet: | BFG591,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 7GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 2W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 70mA, 8V |
Current - Collector (Ic) (Max): | 200mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | BFG591 |
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BFG591,115 is a type of bipolar junction transistor (BJT) intended for use in high frequency applications. It is one of the most popular RF BJTs, thanks to its high gain and linear RF behavior. It has the same pin connection and configuration as the industry-standard 2N2222 BJT.
This transistor is primarily intended for use in RF amplifier circuits, and is best suited for narrowband applications such as RF receivers and transmitters, frequency synthesizers, and RF power amplifiers. It is also suitable for use in high frequency oscillators, audio waveform generators, modulators, and as a general purpose main amplifier. It offers excellent gain linearity and low noise characteristics, making it one of the most popular transistors for general-purpose RF amplification.
The BFG591,115 transistor is a three-terminal semiconductor device consisting of two independent, PNP or NPN, silicon transistor die mounted on a commercial leaded package. Each transistor die has a collector, base, and emitter, and they are connected together so that they share a common emitter and base. The two transistors operate as either a Darlington pair with a single collector or as two independent transistors with a common base.
The BJT uses a simple working principle. When a voltage is applied to the base of the BJT, current flows from the base to the collector and from the collector to the emitter. The amount of current that flows is proportional to the voltage applied to the base. As the base voltage increases, the collector current increases exponentially, resulting in an amplification effect. This basic principle is used in the BFG591,115 transistor to achieve high gain and linear RF behavior.
Overall, the BFG591,115 is an excellent choice for a wide range of RF applications. Thanks to its high gain, low noise, and linear RF behavior, it is one of the most popular RF BJTs on the market. It also offers excellent gain linearity and low noise characteristics, making it the preferred choice for general-purpose RF amplification.
The specific data is subject to PDF, and the above content is for reference
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