Allicdata Part #: | BFG520,235-ND |
Manufacturer Part#: |
BFG520,235 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS RF NPN 9GHZ 15V SOT143 |
More Detail: | RF Transistor NPN 15V 70mA 9GHz 300mW Surface Moun... |
DataSheet: | BFG520,235 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 9GHz |
Noise Figure (dB Typ @ f): | 1.1dB ~ 2.1dB @ 900MHz |
Gain: | -- |
Power - Max: | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 20mA, 6V |
Current - Collector (Ic) (Max): | 70mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143B |
Base Part Number: | BFG520 |
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Introduction
BFG520,235 Transistors are Bipolar (BJT) - RF Transistors designed primarily for applications requiring high frequency, low power consumption and higher gain. The BFG520,235 is functionally similar to the NXP BF700 and has similar packaging, but is more commonly used in more complex applications than its predecessor. Regarding the workings of the transistor, the BFG520,235 has a junction gate field-effect FET (JFET) structure, which concentrates the majority of its gain in the frequency range from 300 MHz to 1.5 GHz.
Application Fields
The BFG520,235 can be used in a wide range of applications from microwave and digital communication systems to low-power switched-mode power supplies. Among its most common uses are amplifiers, environmental sensors, RF power amplifiers, grid-like antenna networks, frequency multipliers and oscillators. Additionally, the BFG520,235 is also used in radio receivers, frequency divider circuits, low-noise amplifiers, high-power transmitter amplifiers, audio / video equipment and other optical components.
Working Principles
The BFG520,235 works by using a junction gate field-effect structure, which focuses the gain into the frequency range from 300 MHz to 1.5 GHz. This transistor features a highly-performant FET structure, which consists of three terminals connected between the emitter and collector electrodes. The gate terminal, on the other hand, is responsible for providing the gain, impedance and frequency control for the circuit.
The BFG520,235 also features an input capacitance or ‘pull-up’ capacitance, which is located between the gate and collector electrodes. This capacitance is used to raise the input impedance at the gate terminal and to ensure the fidelity of the circuit’s signal. Additionally, the BFG520,235 also features a reverse and forward current gain ratio, which determines the transistor’s gain in the frequency peaks.
Conclusion
In conclusion, the BFG520,235 is a Bipolar (BJT) - RF Transistor designed primarily for applications requiring high frequency, low power consumption and higher gain. It has a junction gate field-effect FET (JFET) structure, which concentrates the majority of the transistor’s gain in the frequency range from 300 MHz to 1.5 GHz. The BFG520,235 is commonly used in amplifiers, environmental sensors, RF power amplifiers, grid-like antenna networks, frequency multipliers and oscillators, making it a versatile solution for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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