BFG520,235 Allicdata Electronics
Allicdata Part #:

BFG520,235-ND

Manufacturer Part#:

BFG520,235

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS RF NPN 9GHZ 15V SOT143
More Detail: RF Transistor NPN 15V 70mA 9GHz 300mW Surface Moun...
DataSheet: BFG520,235 datasheetBFG520,235 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Gain: --
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B
Base Part Number: BFG520
Description

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Introduction

BFG520,235 Transistors are Bipolar (BJT) - RF Transistors designed primarily for applications requiring high frequency, low power consumption and higher gain. The BFG520,235 is functionally similar to the NXP BF700 and has similar packaging, but is more commonly used in more complex applications than its predecessor. Regarding the workings of the transistor, the BFG520,235 has a junction gate field-effect FET (JFET) structure, which concentrates the majority of its gain in the frequency range from 300 MHz to 1.5 GHz.

Application Fields

The BFG520,235 can be used in a wide range of applications from microwave and digital communication systems to low-power switched-mode power supplies. Among its most common uses are amplifiers, environmental sensors, RF power amplifiers, grid-like antenna networks, frequency multipliers and oscillators. Additionally, the BFG520,235 is also used in radio receivers, frequency divider circuits, low-noise amplifiers, high-power transmitter amplifiers, audio / video equipment and other optical components.

Working Principles

The BFG520,235 works by using a junction gate field-effect structure, which focuses the gain into the frequency range from 300 MHz to 1.5 GHz. This transistor features a highly-performant FET structure, which consists of three terminals connected between the emitter and collector electrodes. The gate terminal, on the other hand, is responsible for providing the gain, impedance and frequency control for the circuit.

The BFG520,235 also features an input capacitance or ‘pull-up’ capacitance, which is located between the gate and collector electrodes. This capacitance is used to raise the input impedance at the gate terminal and to ensure the fidelity of the circuit’s signal. Additionally, the BFG520,235 also features a reverse and forward current gain ratio, which determines the transistor’s gain in the frequency peaks.

Conclusion

In conclusion, the BFG520,235 is a Bipolar (BJT) - RF Transistor designed primarily for applications requiring high frequency, low power consumption and higher gain. It has a junction gate field-effect FET (JFET) structure, which concentrates the majority of the transistor’s gain in the frequency range from 300 MHz to 1.5 GHz. The BFG520,235 is commonly used in amplifiers, environmental sensors, RF power amplifiers, grid-like antenna networks, frequency multipliers and oscillators, making it a versatile solution for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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