BFG540,215 Discrete Semiconductor Products |
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Allicdata Part #: | 568-11108-2-ND |
Manufacturer Part#: |
BFG540,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS RF 15V 9GHZ SOT143B |
More Detail: | RF Transistor NPN 15V 120mA 9GHz 400mW Surface Mou... |
DataSheet: | BFG540,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 9GHz |
Noise Figure (dB Typ @ f): | 1.3dB ~ 1.8dB @ 900MHz |
Gain: | -- |
Power - Max: | 400mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 40mA, 8V |
Current - Collector (Ic) (Max): | 120mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143B |
Base Part Number: | BFG540 |
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The BFG540,215 is one of the transistors from the family of Bipolar Junction Transistors (BJT) used for radio frequency (RF) applications. It is a modern, high-gain and high-frequency NPN silicon BJT. The transistor belongs to the group of low power end-of-line transistors and has a classification of low voltage and low current.
The basic principle of operation of the BFG540,215 transistor is related to the current flow between the base and the emitter terminal. A current injection in the base creates an amplified current flow between the collector and the emitter by controlling the base-emitter voltage. This type of transistor is renowned for its high gain and excellent power gain, thus making it suitable for use in RF amplifiers and oscillators.
BFG540,215 transistors come in a TO-92 package, which is a plastic encapsulated packaging for semiconductor components. The major feature of this package is its low cost and the possibility to use automated insertion. The encapsulation material is a flame-retardant epoxy plastic, which is designed to protect the chip from oxidation, as well as from mechanical damage. The thermal resistance of this package is also very low, so it reduces the risk of overheating.
The transistor can be used for a range of applications, such as RF amplifiers, oscillators and frequency converters. It is especially suitable when low noise, high gain and power gain characteristics are required. The BFG540,215 is also suitable for the construction of preamplifiers, audio amplifiers, deflection circuitry and pressure sensors. Its high frequency capabilities make it useful for high frequency applications such A FM receivers, television receivers, cellular and cordless RF transceivers, wireless local area networks, and Bluetooth and IrDA devices.
In addition, the transistor can be used to construct a wide range of other circuits, including negative feedback circuits, current mirroring circuits and many other analog, digital and mixed circuit designs. It is also used in power amplifiers, power regulation circuits and power switching circuits. The low cost of the device makes it a popular choice for circuit designers looking for a cost-effective solution.
When it comes to performance, the BFG540,215 can be used for a wide range of applications. Its high gain and power gain values make it a good choice for RF applications. Its low noise characteristics make it suitable for designing amplifiers and receivers. Its low voltage and current requirements also make it suitable for battery-operated applications.
The BFG540,215 transistor is a popular choice for those looking for low power and high frequency performance. It is an ideal choice for a wide range of RF, analog and digital circuit designs. Its low cost makes it an attractive choice for cost-conscious designers. Its low voltage and current requirements make it a good option for battery-operated applications.
The specific data is subject to PDF, and the above content is for reference
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