BFG541,115 Discrete Semiconductor Products |
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Allicdata Part #: | 568-1984-2-ND |
Manufacturer Part#: |
BFG541,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 15V 9GHZ SOT223 |
More Detail: | RF Transistor NPN 15V 120mA 9GHz 650mW Surface Mou... |
DataSheet: | BFG541,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 9GHz |
Noise Figure (dB Typ @ f): | 1.3dB ~ 2.4dB @ 900MHz |
Gain: | -- |
Power - Max: | 650mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 40mA, 8V |
Current - Collector (Ic) (Max): | 120mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | BFG541 |
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Transistors - Bipolar (BJT) - RF
BFG541,115 is a composition of bipolar junction transistors (BJT) which is designed to operate in small signal, high-frequency applications in the radio frequency (RF) range. It is widely used in professional and consumer electronics, including cellular phones, WiFi routers, and security systems. This transistor has excellent input/output characteristics such as high frequency response, low harmonic distortion and a wide dynamic range.
Working Principle
BFG541,115 is a three-terminal device that operates using the field effect principle which was developed by Johannes Bardeen and Walter Brattain at Bell Laboratories in the late 1940s. It is composed of an emitter, collector and base. The external circuitry of the device applies a bias voltage to the base which forms a depletion layer at the P-N junction. This depletion layer controls the current flow through the transistor and the device can be switched on and off by the bias voltage.
In addition, the current gain of the transistor is determined by the different resistances between the emitter and collector. The current gain of the transistor is denoted as ‘hFE’ and can be adjusted by altering the values of resistor in the external circuitry.
Application Field
BFG541,115 transistors can be used in a variety of high-frequency applications, including amplifiers, radio receivers and cellular communications systems. It is often used in portable and hand-held products, where its small size makes the design more efficient. It can also be used for power amplification, signal modulation and filtering. Additionally, its low power consumption means it is well suited to battery operated devices.
In addition, BFG541,115 transistors are often used as variable-gain amplifiers, as the current gain of the transistor can be adjusted. This makes the transistor well suited to audio applications, as the variable-gain amplifier can be used to achieve low-noise, high-sensitivity and linear signal shaping. It can also be used in audio power amplifiers, where it can provide wide bandwidth and low distortion.
Conclusion
BFG541,115 is a versatile and reliable transistor which is well suited to high-frequency, small signal applications in the radio frequency (RF) range. Its small size and low power consumption make it ideal for portable and hand-held products, whilst its adjustable current gain make it well suited for audio applications. Therefore, it is an ideal choice for a variety of projects that require reliable and efficient operation.
The specific data is subject to PDF, and the above content is for reference
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