Allicdata Part #: | BFG590,215-ND |
Manufacturer Part#: |
BFG590,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 15V 200MA SOT143B |
More Detail: | RF Transistor NPN 15V 200mA 5GHz 400mW Surface Mou... |
DataSheet: | BFG590,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 5GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 400mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 70mA, 8V |
Current - Collector (Ic) (Max): | 200mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143B |
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Introduction
BFG590,215 is a type of bipolar junction transistor (BJT), more specifically, an RF BJT. It is designed to operate within a given range of frequencies and power, which makes it suitable for a variety of applications. In this article, we will discuss the application field and working principle of the BFG590,215.
Application Field and Working Principle
Application Field
The BFG590,215 is often used in high frequency applications, such as radio frequency (RF) transmission and reception, amplifier circuits, and other applications that require a high level of stability and accuracy.
Due to its high current gain and low noise characteristics, the BFG590,215 is also suitable for use in video applications, such as modulators, detectors and video cameras. Additionally, due to its high collector-emitter gain, the BFG590,215 is often used in switching power supply circuits and RF linear amplifiers.
Working Principle
The BFG590,215 is essentially two transistors connected together in a single package. The two transistors, known as the emitter and the collector, are connected internally by a narrow base region. When a voltage is applied between the emitter and collector, electrons will flow through the base region, which will in turn create a current between the emitter and collector.
The BFG590,215 is considered an RF BJT because it uses the principle of "current gain", which is the ratio between the current flowing from the collector to the emitter, compared to that flowing from the emitter to the collector. When a high current is applied to the emitter, a proportionally higher current will flow from the collector to the emitter, which amplifies the output signal.
Because the current flow in an RF BJT is relatively low, its power consumption is also low. This allows the BFG590,215 to be used in a variety of applications, where lower power consumption and minimal noise are required.
Conclusion
The BFG590,215 is a type of bipolar junction transistor (BJT), more specifically, an RF BJT. It is designed for use in a variety of high frequency applications, such as RF transmission and reception, amplifier circuits, video applications, and switching power supply circuits. It uses the principle of "current gain" to amplify signals and has low power consumption, making it suitable for applications where power efficiency and minimal noise are important.
The specific data is subject to PDF, and the above content is for reference
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