BFG520W/X,115

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The BFG520W/X is a high performance and reliable NPN silicon transistor. It is part of the RF transistors – bipolar range and is particularly suitable for use at operating frequencies up to 500MHz. It is ideally suited for power amplification and linear applications in small and medium signal radio applications, for both military and commercial applications.

The BFG520W/X transistor is manufactured using a high quality silicon material and houses three pins. The center pin is the emitter pin and is responsible for generally providing output as well as power amplification. The base pin is connected to the external bias control device, while the other two pins are collector and base, which control the gain and current settings respectively.

The BFG520W/X transistor has a frequency range from 100 MHz to 500 MHz as well as a broadband frequency response. It also exhibits a low gain variation over the specified frequency range when operated in the linear mode. In terms of power handling capacity, the BFG520W/X can deliver 1W of signal power each when operated at 1 MHz and 25°C, with a gain estimated at 15 dB. At 500 MHz and 25°C, it is capable of delivering up to 0.6 W of power. Furthermore, the transistor features a considerable power dissipation rating of 18 W, a Thermal Resistance of 175°C/W and an average collector current gain of 10.

The BFG520W/X transistor is particularly suitable for use in UHF and VHF band applications, such as base station equipment, portable and mobile telephone systems, land and maritime navigation, military radio, and even radio and television broadcasting. It is an ideal choice for those looking for a reliable, robust and high performance component for the abovementioned applications. The transistor is also suitable for use in other RF applications such as RF power amplifiers, high current switch, mixer and modulator circuit, base station power amplifier & low noise amplifier.

In terms of its working principle, BFG520W/X is a N-channel transistor, which means it can have a wide range of electrical properties. This is because the electrical properties of a N-channel transistor are determined by the amount of electrons traveling through the different channels. When working, the electrons flow through the channels, along the straight line, from the emitter to the base, and then out of the device through the collector. This is the reason why this type of transconductance-type transistor is used in many applications – the electrons can easily move in the different channels and thus produce an amplified output.

Overall, the BFG520W/X is a reliable, robust and high performance NPN silicon transistor, suitable for RF applications. It has a broad frequency response, low gain variation over a specified frequency range, power handling capacity of up to 1W of signal power and an average collector current gain of 10. The transistor is ideal for use in UHF and VHF band applications, such as base station equipment, portable and mobile telephone systems, land and maritime navigation, military radio and radio and television broadcasting.

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