BFG590/X,215 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	5GHz
Noise Figure (dB Typ @ f):	--
Gain:	--
Power - Max:	400mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 70mA, 8V
Current - Collector (Ic) (Max):	200mA
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-253-4, TO-253AA
Supplier Device Package:	SOT-143B

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Introduction

BFG590/X,215 is a high performance RF transistors with excellent power and gain characteristics. This device is designed for low frequency, medium power, high gain, Class A linear amplifier and general purpose applications, especially in the VHF range.

Device Overview

The BFG590/X,215 is an epitaxial silicon NPN transistor designed for economical, medium power linear applications. It has a 12 volt collector-emitter voltage rating and a current gain of 100 minimum. It is also a gold metallized transistor, offering superior reliability and a high packing density.

Applications

The BFG590/X,215 can be used in a wide range of RF and microwave applications. It is particularly suitable for VHF applications where good frequency response, low group delay, and high power are required, such as high gain linear amplifiers, power amplifiers, low noise amplifiers and mixers.

Working Principle

The BFG590/X,215 consists of two NPN transistors connected in a common collector configuration. The transistor consists of a P-type epitaxial layer over an N-type substrate, with two N-type thermal diffusions. This creates two N-type junctions, one between the base and collector, and one between the base and emitter. electrons can flow between the base and collector when sufficient bias current is supplied, creating a collector current.The base-emitter junction acts as a variable resistor, allowing electrons to flow between the base and emitter when the correct voltage is supplied. This creates a current between the emitter and collector, and this is the current that amplifies the input signal. As the input signal increases, it increases the current across the base-emitter junction, which in turn increases the current across the collector-emitter junction, amplifying the signal.The collector current is proportional to the current flowing through the base-emitter junction, and this is governed by the voltage supplied to the base. The gain of the device is determined by the ratio of the collector current to the base current, and this is known as the current gain.

Conclusion

The BFG590/X,215 is a high performance RF transistors with excellent power and gain characteristics. It is a commonly used device for low frequency, medium power, high gain, Class A linear amplifier and general purpose applications, especially in the VHF range. It is designed with a 12 volt collector-emitter voltage rating and a current gain of 100 minimum. It can be used in a wide range of RF and microwave applications and is particularly suitable for VHF applications. Its working principle depends on the current flowing between the base and collector, which adjusts the current flowing between the emitter and collector, amplifying the input signal.

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