BFG520/X,215 Allicdata Electronics

BFG520/X,215 Discrete Semiconductor Products

Allicdata Part #:

568-6191-1-ND

Manufacturer Part#:

BFG520/X,215

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS RF NPN 9GHZ 15V SOT143B
More Detail: RF Transistor NPN 15V 70mA 9GHz 300mW Surface Moun...
DataSheet: BFG520/X,215 datasheetBFG520/X,215 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Gain: --
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B
Base Part Number: BFG520
Description

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The BFG520/X,215 is a medium power silicon bipolar junction transistor. It belongs to the RF transistors category and is used primarily in radio frequency and microwave applications. This device uses a lateral diffusion structure and features standard low capacitance geometries, which makes it suitable in high frequency applications. In addition, the lower-cost manufacturing process used in making the BFG520/X,215 transistors enable them to be used in a wide range of radio frequency applications.

The purpose of this transistor is to allow the user to function as both amplifier as well as oscillator. The operation of this transistor as an internal oscillator occurs when the transistor is operating in its active region. This allows RF signals to be generated at desired frequencies. The main advantage of this configuration is that it does not require an external oscillator to generate the desired predetermined waveforms. The use of this configuration allows for increased frequency stability, improved efficiency and reduced ringing.

In addition to acting as an oscillator, the BFG520/X,215 transistors can also act as an amplifier by providing signal boosting and signal conditioning at certain frequencies. This allows for improved system performance and signal quality. A typical amplifier application of this transistor is in the field of communications. Radio signal amplification is needed to increase the range and clarity of the signal produced. The amplified signal can then be sent to the receiver, where it will be matched to the receiving device.

By altering the biasing of the BFG520/X,215 transistors, they can also be used as logic circuits. Different logic circuit configurations can be used to achieve different functions. For example, NAND or NOR gates can be created with this device, allowing for basic logic functions. These applications are useful in digital systems and can eliminate the need of an external logic element.

Another important application of the BFG520/X,215 devices are in power amplifiers. The ability of the transistor to handle large power levels makes it ideal for this type of application. When used as a power amplifier, the voltage standing wave ratio (VSWR) of the device increases, allowing greater amplification and improved signal fidelity. This transistor is also used in audio amplifiers, making it ideal for a variety of digital and audio amplifier applications.

Overall, the BFG520/X,215 transistors are used in many different types of applications. Their low cost of manufacturing makes them an ideal choice for applications that require a large volume of transistors. Their good characteristics make them suitable in many radio frequency, microwave and logic applications. They are also versatile enough to be used in audio and power amplifier applications as well.

The specific data is subject to PDF, and the above content is for reference

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