| Allicdata Part #: | BFS380L6E6327-ND |
| Manufacturer Part#: |
BFS 380L6 E6327 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | TRANSISTOR GP BJT NPN 6V TSLP-6 |
| More Detail: | RF Transistor 2 NPN (Dual) 9V 80mA 14GHz 380mW Sur... |
| DataSheet: | BFS 380L6 E6327 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Discontinued at Digi-Key |
| Transistor Type: | 2 NPN (Dual) |
| Voltage - Collector Emitter Breakdown (Max): | 9V |
| Frequency - Transition: | 14GHz |
| Noise Figure (dB Typ @ f): | 1.3dB ~ 1.9dB @ 1.8GHz ~ 3GHz |
| Gain: | 8dB ~ 12dB |
| Power - Max: | 380mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 40mA, 3V |
| Current - Collector (Ic) (Max): | 80mA |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 6-XFDFN |
| Supplier Device Package: | TSLP-6-1 |
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BFS 380L6 E6327 is a type of bipolar junction transistor commonly used in radio frequency (RF) applications. It is a general purpose medium power transistor suitable for switching applications as well as low noise and high current amplify applications. Several features of this transistor make it ideal for RF applications, including its linear gain, excellent uniformity and high reliability. In addition, it has a wide variety of possible applications, such as in high frequency power amplifiers, low-noise electronic circuits, and more.
The BFS 380L6 E6327 is a NPN type transistor, which means its base is positively charged. It has a collector-emitter voltage of 40 volts, a collector current of 3.9A, and a power dissipation of 10W at an ambient temperature of 25°C. It uses a molded plastic package of type TO-126 in order to ensure better thermal conductivity and electrical insulation from the environment. Additionally, it is compatible with various standard surface mount processes. This allows the transistor to be mounted on a wide variety of substrates for its various applications.
The working principle of the BFS 380L6 E6327 involves the use of two p-n junction diodes connected in parallel with a common base terminal. In general, a bipolar junction transistor is a three-terminal semiconductor device capable of amplifying or switching signals. When a voltage is applied to the base terminal, a small current will be able to flow between the emitter and collector terminals. This current, which is called the base current, is amplified by a certain amount depending on the amount of current flowing through the transistor. This amplified current will flow between the collector and emitter terminals.
The BFS 380L6 E6327 is used in a variety of applications due to its excellent linear gain and uniform characteristics. It is often used in high frequency power amplifiers, owing to its ability to provide high power output with low distortion. This makes it ideal for applications such as audio amplifiers, portable radios, and television receivers. Additionally, as a bipolar junction transistor with good linearity, it can also be used for digital applications, such as for switches, gates, and buffers. Finally, due to its low noise characteristics it can also be used in various low noise analog or digital circuits.
In conclusion, the BFS 380L6 E6327 is a versatile bipolar junction transistor that can be used in a wide variety of RF applications. Its excellent linear gain and uniform characteristics make it an ideal choice for high frequency power amplifiers as well as other audio and digital applications. Additionally, its low noise characteristics make it suitable for low noise analog and digital circuits. It is well-suited to a variety of RF applications due to its high reliability, wide range of possible applications, and improved thermal conductivity and electrical insulation.
The specific data is subject to PDF, and the above content is for reference
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BFS 380L6 E6327 Datasheet/PDF