Allicdata Part #: | BFS386L6E6327-ND |
Manufacturer Part#: |
BFS 386L6 E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR ARRAY DUAL NPN TSLP-6 |
More Detail: | RF Transistor 2 NPN (Dual) 6V 35mA, 80mA 14GHz 210... |
DataSheet: | BFS 386L6 E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | 2 NPN (Dual) |
Voltage - Collector Emitter Breakdown (Max): | 6V |
Frequency - Transition: | 14GHz |
Noise Figure (dB Typ @ f): | 1dB ~ 1.6dB @ 1.8GHz ~ 3GHz |
Gain: | 10dB ~ 14.5dB |
Power - Max: | 210mW, 380mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 15mA, 3V / 60 @ 40mA, 3V |
Current - Collector (Ic) (Max): | 35mA, 80mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-XFDFN |
Supplier Device Package: | TSLP-6-1 |
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BFS 386L6 E6327 transistors are RF bipolar junction transistors (BJT). They are specifically designed for low noise and high frequency radio applications. This article will discuss the application fields and working principles associated with this type of device.
The BFS 386L6 E6327 is designed for use in radios and other high-frequency applications. This device is well suited for use in cellular phone base stations and control systems, as well as other applications that require high-frequency, low-noise operation. It is also suitable for audio amplifier and mixer circuits, RF amplifiers, oscillators, frequency dividers, and other high-frequency applications.
The BFS 386L6 E6327 is especially well suited for use in low-noise amplifiers (LNAs) used in radio receivers. Radio receivers require extremely low noise figures to ensure that signals are accurately received. The BFS 386L6 E6327 is capable of extremely low noise figures over a wide frequency range, making it ideal for use in these applications.
The BFS 386L6 E6327 is also suitable for use in signal processing and control systems. Its excellent thermal stability and wide temperature range make it well suited for use in environments where temperature swings are common. The device is also capable of providing high linearity, making it ideal for use in signal processing applications.
The BFS 386L6 E6327 is a bipolar junction transistor. It is formed by connecting two leads to doped semiconductor material, forming a junction between the two materials. A base current is then injected into the junction, causing a current to flow between the two electrodes, called the collector and emitter.
The amount of current flowing between the collector and emitter is then controlled by the base current. This current is also called the bias current. As the bias current increases, more current flows between the collector and emitter. By controlling the base current, the amount of current flowing between the collector and emitter can be adjusted.
The BFS 386L6 E6327 is specifically designed to be used in high-frequency, low-noise applications. The device has a low noise figure and is capable of providing extremely high linearity. These characteristics make the device well suited for use in radio receivers and other high-frequency applications.
The BFS 386L6 E6327 is a RF bipolar junction transistor (BJT) designed for use in radios and other high-frequency applications. This device offers excellent performance, with low noise figures and high linearity over a wide frequency range. This makes it well-suited for use in low-noise amplifiers, radio receivers, oscillators, and other high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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