| Allicdata Part #: | BSP123XTINTR-ND |
| Manufacturer Part#: |
BSP123E6327T |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 370MA SOT223 |
| More Detail: | N-Channel 100V 370mA (Ta) 1.79W (Ta) Surface Mount... |
| DataSheet: | BSP123E6327T Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 1.8V @ 50µA |
| Package / Case: | TO-261-4, TO-261AA |
| Supplier Device Package: | PG-SOT223-4 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.79W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 70pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.4nC @ 10V |
| Series: | SIPMOS® |
| Rds On (Max) @ Id, Vgs: | 6 Ohm @ 370mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.8V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 370mA (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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Introduction
The BSP123E6327T is a single type of transistor that is part of the larger family of Field-effect transistors (FETs). FETs are a type of transistor that use electric fields to modulate their current-carrying capability, allowing for various applications that can take advantage of the effects of changing electric fields. This particular transistor, the BSP123E6327T, is a type of N-Channel Junction field-effect transistor (JFET), which gives it further specific qualities, such as efficient power-amplification capabilities.
What is a JFET?
JFETs are Field-effect transistors that are based on semiconductor technology, where the mechanism is composed of two parts: a source and a drain. The source is a type of terminal, often composed of a large metal plate, and the drain is a type of terminal that can be connected to the connection of the power supply. A voltage applied to the source will cause a shift in the electric field intensity, which then causes a change in the current flowing between the source and the drain. The advantage of JFETs is that they have a low input capacitance, allowing for efficient power-amplification.
Working Principle of BSP123E6327T
The BSP123E6327T is a N-Channel Junction field-effect transistor, meaning that it is a type of transistor that can amplify electrical signals, and it uses electric fields to modulate its current-carrying capability. It is composed of a source, a drain, and a gate. The source and drain are the two terminals that are responsible for the current-carrying capabilities of the transistor, while the gate allows a voltage to be applied to the source in order to control the current-passing through the source and drain. When a voltage is applied to the gate, it changes the electric potential of the gate, which then causes a shift in the electric field intensity between the source and the drain, and therefore changes the current-flow between the source and the drain.
BSP123E6327T Application Fields
The current-carrying capability and low input capacitance of the BSP123E6327T make it a valuable transistor for amplifying electrical signals in a range of applications. These include high-sensitivity amplifiers for sensing, control, and detection circuits, as well as for use in audio applications in order to amplify signals with low distortion. The BSP123E6327T can also be used as an impedance matching device in order to convert an audio signal from one impedance to another with minimal loss. The BSP123E6327T can also be used in power supply circuits, as it is a low input-capacitance transistor that can efficiently amplify, thus making it highly suitable for power amplifiers. The BSP123E6327T can also be used in switched-mode power supplies, which can provide more efficient power at a lower power input.
Comparison of the BSP123E6327T to other Transistors
The BSP123E6327T is similar to other types of transistors in its practical characteristics, meaning that it has the same transistor action and functions as other Field-effect transistors. The main difference between JFETs, such as the BSP123E6327T, and other transistors is that the gate voltage of a JFET has a more significant effect on the current-flow between the source and the drain. In addition, the input capacitance of JFETs is much lower than that of other transistors, making them more suitable for applications such as power amplifiers that require efficient power-amplification. The BSP123E6327T is also well suited to audio applications, as its low input capacitance produces less distortion than other types of transistors.
Conclusion
The BSP123E6327T is a single N-Channel Junction field-effect transistor that has current-carrying capabilities and a low input capacitance. It has many applications in a range of different fields, from signals-amplification to power-supply circuits. It has many similarities to other transistors, but its lower input capacitance and greater effect of the gate voltage on the current-flow make it highly suitable for applications such as audio applications and power amplifiers.
The specific data is subject to PDF, and the above content is for reference
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| BSP129H6327XTSA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 240V 350MA SO... |
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| BSP171PE6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 1.9A SOT2... |
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| BSP129L6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 240V 350MA SO... |
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BSP123E6327T Datasheet/PDF