BSP129E6327T Allicdata Electronics
Allicdata Part #:

BSP129XTINTR-ND

Manufacturer Part#:

BSP129E6327T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 240V 350MA SOT223
More Detail: N-Channel 240V 350mA (Ta) 1.8W (Ta) Surface Mount ...
DataSheet: BSP129E6327T datasheetBSP129E6327T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 108µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
FET Feature: Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds: 108pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 5V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drain to Source Voltage (Vdss): 240V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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BSP129E6327T is a N-channel Enhancement Mode Field-Effect Transistor (FET), belonging to the single generic family of metal-oxide-semiconductor field-effect transistors (MOSFETs). These types of transistors are widely used in many applications, from power supplies and personal computers, to video game consoles and more.

BSP129E6327T, in particular, is a powerfield-effect transistor (powerFET), which, due to its high resistance and current capability, is particularly suitable for applications involving high voltage power switches (such as in motor control and power supply applications) and delivery of high power at low frequency. It is designed to provide a reliable and robust solution for power applications.

The working principle of BSP129E6327T is based on a basic enhancement mode enhancement-mode process. This process involves the use of a gate dielectric material that lies between the two terminals of the MOSFET, a source (N-type) and a drain (P-type). When voltage is applied between the gate and the source, a potential barrier is formed, which prevents current from flowing through the device. This is the “on” state. When the gate-source voltage is reversed (also known as the “off” state), the barrier collapses, allowing current to flow.

BSP129E6327T transistors are capable of high switching speeds and low on-resistance, making them well suited for applications that require high voltage power switches. Their low capacitance also makes them particularly suitable for switching sensitive signals. They are also widely used in power management systems where fast switching times, low voltage drop and low source-drain capacitance are needed.

The powerFETs manufactured by BSP129E6327T are designed to work between –55°C and +150°C, with a maximum breakdown voltage (Vgs) of 10V and a maximum operating current (Igs) of 200mA. Other features include an on-resistance (Ro) of 0.1 ohm and a maximum collector-emitter saturation voltage (Vce(sat)) of 150V. With these characteristics, the BSP129E6327T is an efficient and reliable choice for applications that require high speed and low on-resistance.

The powerFETs manufactured by BSP129E6327T are widely used in applications such as motor control, power supplies, audio amplifiers, video game consoles, consumer electronics, and many other electronic devices. Their high operation voltage, low capacitance, and fast switching times make them ideal for these applications. As a result, BSP129E6327T transistors are well-suited for modern power management systems where efficiency and performance are key.

The specific data is subject to PDF, and the above content is for reference

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